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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7802DN_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.6678 35.0895 15.9838 23.2589 Ambient 7.2586 2.5015 50.2866 2.3938 Case 568.5422 257.4745 76.2833 1.4977 Case 1.0022 16.9938 226.0908 10.8229 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69245 Revision: 28-Jul-07
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Si7802DN_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.6271 14.7288 22.0958 35.5483 Ambient 6.2941 44.3499 961.8988 689.3641
Case 687.6158 670.6725 718.4132 323.2985 Case 801.7716 6.0245 458.2224 30.8864
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69245 Revision: 28-Jul-07
Si7802DN_RC
Document Number: 69245 Revision: 28-Jul-07
www.vishay.com

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