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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7662DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.5055 46.5376 8.0636 5.8933 Ambient 20.4586 1.4476 177.3580 1.2936 Case 840.8405 101.5474 562.9615 294.6506 Case 15.8122 1.2488 41.8632 3.2853 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69230 Revision: 24-Jul-07
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Si7662DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 1.8371 6.8943 11.7648 44.5038 Ambient 14.3051 25.5403 198.0887 1.2637
Case 439.3196 153.7995 421.2108 785.6701 Case 1.3028 9.6000 522.7778 2.3963
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69230 Revision: 24-Jul-07
Si7662DP_RC
Document Number: 69230 Revision: 24-Jul-07
www.vishay.com

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