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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7445DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 36.6792 8.9792 15.3029 4.0387 Ambient 2.6449 147.1111 1.5342 26.3884 Case 456.0779 431.1896 187.6177 225.1148 Case 16.2436 21.8433 178.4142 2.2195 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69219 Revision: 24-Jul-07
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Si7445DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.0380 10.5353 25.8994 25.5273 Ambient 15.3494 63.3553 744.4770 2.4045
Case 256.6363 458.7090 308.6702 275.9845 Case 1.3532 6.4826 802.9464 35.6118
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69219 Revision: 24-Jul-07
Si7445DP_RC
Document Number: 69219 Revision: 24-Jul-07
www.vishay.com

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