Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7384DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 38.0097 11.6444 16.7121 3.6338 Ambient 2.5147 56.3927 1.4208 2.3469 Case 626.8248 917.9595 615.9675 839.2482 Case 849.0415 7.2331 41.4201 7.8997 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69208 Revision: 23-Jul-07
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Si7384DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.8220 12.2219 27.1389 26.8172 Ambient 2.0776 47.6072 761.5892 2.0814
Case 977.4601 1.4695 362.5592 190.4807 Case 713.7948 3.1289 17.1533 14.2944
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 69208 Revision: 23-Jul-07
Si7384DP_RC
Document Number: 69208 Revision: 23-Jul-07
www.vishay.com
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