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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7344DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 38.9290 10.8790 16.5097 3.6823 Ambient 2.3983 80.2007 1.6986 3.5945 Case 1.0399 1.3479 1.2510 1.8612 Case 1.2485 37.3386 251.4874 21.5348 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69204 Revision: 23-Jul-07
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Si7344DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 4.9201 11.6558 27.7338 25.6903 Ambient 4.6186 79.0991 870.6646 1.7149
Case 1.2891 2.0708 1.5451 595.0000 Case 1.1669 11.6625 15.7170 710.6919
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69204 Revision: 23-Jul-07
Si7344DP_RC
Document Number: 69204 Revision: 23-Jul-07
www.vishay.com

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