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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si7342DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 39.5374 10.8992 16.5535 3.0099 Ambient 2.5312 103.8563 1.3735 11.4772 Case 679.1441 1.2205 187.2559 1.1131 Case 688.2535 11.8253 695.4028 8.0621 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69203 Revision: 23-Jul-07
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Si7342DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.7287 12.7003 28.9036 24.6674 Ambient 10.2375 84.9723 803.1070 2.5755
Case 832.6741 565.9533 1.6001 201.2726 Case 582.0691 4.0344 482.5028 455.1734
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 69203 Revision: 23-Jul-07
Si7342DP_RC
Document Number: 69203 Revision: 23-Jul-07
www.vishay.com

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