Thermal Model Parameters parametric values thermal model have bee
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Si4174DY_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-Spice, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.8856 44.8089 13.5765 21.7290 Ambient 1.7094 1.4502 24.9886 105.2745 Case Case Foot 1.7291 7.3858 10.2819 5.6032 Foot 355.5413 46.2260 121.2396 6.7200
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69034 Revision: 27-Oct-08
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Si4174DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Note indicates applicable Ambient 5.9709 21.1952 17.4642 40.3697 Ambient 1.6152 20.2075 131.3076 1.4794 Case Case Foot 2.5551 8.4698 7.3952 6.5799 Foot 702.5856 6.6043 38.0849 77.4605
Thermal Capacitance (Joules/°C)
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Document Number: 69034 Revision: 27-Oct-08
Si4174DY_RC
Document Number: 69034 Revision: 27-Oct-08
www.vishay.com
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