Thermal Model Parameters parametric values thermal model have bee
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Si4172DY_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-Spice, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 4.8867 44.9106 13.2696 21.9331 Ambient 1.7548 1.4462 25.5175 100.9694 Case Case Foot 2.5401 7.1875 11.0233 7.2491 Foot 617.1702 69.6245 102.9985 8.3697
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69033 Revision: 27-Oct-08
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Si4172DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Note indicates applicable Ambient 5.6897 21.2184 17.6002 40.4917 Ambient 1.4536 19.9921 123.3450 1.4725 Case Case Foot 2.8317 8.7795 7.8639 8.5249 Foot 416.9451 6.0982 27.8864 60.3244
Thermal Capacitance (Joules/°C)
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Document Number: 69033 Revision: 27-Oct-08
Si4172DY_RC
Document Number: 69033 Revision: 27-Oct-08
www.vishay.com
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