Thermal Model Parameters parametric values thermal model have bee
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Si2309CDS_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-Spice, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 36.8796 74.9180 6.5691 47.6333 Ambient 988.0938 4.2497 30.0325 2.7137 Case Case Foot 38.7699 21.1452 3.3528 9.7321 Foot 18.7339 8.2436 137.2774 2.5016
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 69014 Revision: 21-Oct-08
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Si2309CDS_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Note indicates applicable Ambient 8.6985 52.0151 58.1285 47.1579 Ambient 53.7072 807.9346 4.1091 2.7898 Case Case Foot 5.4401 23.9941 38.1853 5.3805 Foot 218.0438 2.1222 8.3141 396.7079
Thermal Capacitance (Joules/°C)
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Document Number: 69014 Revision: 21-Oct-08
Si2309CDS_RC
Document Number: 69014 Revision: 21-Oct-08
www.vishay.com
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