Description: Package: Out: Single P-Channel, MOSFET SOT-23 Identical
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Si2307CDS Si2307DS
Description: Package: Out: Single P-Channel, MOSFET SOT-23 Identical
Part Number Replacements: Si2307CDS-T1-E3 Si2307CDS-T1-GE3 replaces Si2307DS-T1 Si2307CDS-T1-E3 Si2307CDS-T1-GE3 replaces Si2307DS-T1-E3
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation SYMBOL Tstg RthJA Si2307CDS 0.91 Si2307DS 1.25 1.25 °C/W UNIT
Operating Junction Storage Temperature Range Maximum Junction-to-Ambient
SPECIFICATIONS unless otherwise noted
PARAMETER Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Notes denotes specified datasheet Ciss Coss Crss VGS(th) IGSS IDSS ID(on) RDS(on) 0.073 0.110 0.088 0.138 0.064 0.103 0.08 0.14 SYMBOL Si2307CDS MIN. TYP. MAX. MIN. Si2307DS TYP. MAX. UNIT
Specification comparisons supplied courtesy compare devices constitute commercial product datasheet guarantee identical performance. Designers should refer appropriate datasheets same number guaranteed specification limits.
Document Number: 68949 Revision: 04-Sep-08
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