Thermal Model Parameters parametric values thermal model have bee
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Si4435DDY_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-Spice, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 10.0679 2.5692 45.6494 26.7135 Ambient 12.0849 536.6335 1.3531 62.5585 Case Case Foot 2.3723 7.6539 2.7113 12.2625 Foot 639.9809 9.2486 463.6974 70.3636
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68890 Revision: 30-Jul-08
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Si4435DDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Note indicates applicable Ambient 3.1513 16.9724 23.0698 41.8065 Ambient 869.8273 11.4743 75.6833 1.4839 Case Case Foot 2.6928 10.0087 7.2768 5.0217 Foot 592.5592 7.6428 62.4334 28.3770
Thermal Capacitance (Joules/°C)
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Document Number: 68890 Revision: 30-Jul-08
Si4435DDY_RC
Document Number: 68890 Revision: 30-Jul-08
www.vishay.com
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