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R-C Thermal Model Parameters

R-C THERMAL MODEL FOR TANK CONFIGURATION

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform."
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 44.1392 10.6947 11.5949 3.5712 Ambient 1.8399 2.2986 120.8597 m 14.3351 m Case 503.4000 m 1.4502 50.3000 m 496.1000 m Case 903.2755 u 11.1911 m 635.5341 m 9.9311 m Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 68887 Revision: 30-Jul-08
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Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note NA indicates not applicable Ambient 5.0575 8.9427 14.6554 41.3444 Ambient 15.7525 m 82.3123 m 379.8746 m 1.2559 Case 830.9496 m 1.0946 570.4218 m 4.0286 m Case 935.8087 u 6.3024 m 5.7626 m 29.1935 m Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A
Thermal Capacitance (Joules / °C)
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Document Number: 68887 Revision: 30-Jul-08
Vishay Siliconix
Document Number: 68887 Revision: 30-Jul-08
www.vishay.com 3