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Thermal Model Parameters parametric values thermal model have bee


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Si4413CDY_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-Spice, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.1908 24.4508 26.0882 27.2702 Ambient 22.0422 56.2436 3.5677 2.3495 Case Case Foot 1.1954 4.4461 9.9726 5.3859 Foot 8.9630 127.4145 143.4141 11.8755
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68754 Revision: 05-Jun-08
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Si4413CDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Note indicates applicable Ambient 2.5119 16.7080 13.7271 51.0530 Ambient 2.9444 28.6092 39.5058 1.4513 Case Case Foot 3.3796 6.2241 7.7716 3.6247 Foot 4.5400 9.2194 91.1175 260.8198
Thermal Capacitance (Joules/°C)
www.vishay.com
Document Number: 68754 Revision: 05-Jun-08
Si4413CDY_RC
Document Number: 68754 Revision: 05-Jun-08
www.vishay.com

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