Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si7174DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-SPICE, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET.
These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.3601 22.6121 20.0187 6.0091 Ambient 35.5340 1.5011 7.7177 324.1614 Case 79.4441 450.1384 104.1961 566.2214 Case 144.7941 200.3436 6.5221 25.5083 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68679 Revision: 22-Apr-08
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Si7174DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 3.2943 8.1467 23.9672 18.5918 Ambient 20.2731 81.1601 898.3513 5.3960
Case 167.8347 412.4867 329.2473 290.4313 Case 1.2267 14.9583 26.1707 240.5443
Foot Foot
Thermal Capacitance (Joules/°C)
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Document Number: 68679 Revision: 22-Apr-08
Si7174DP_RC
Document Number: 68679 Revision: 22-Apr-08
www.vishay.com
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