Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si3407DV_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-SPICE, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET.
These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 11.8734 45.8975 24.6642 27.5649 Ambient 1.8936 9.9473 1.6611 3.0050 Case Case Foot 7.6190 2.1850 9.7777 10.4183 Foot 6.2299 455.2646 29.9265 8.6093
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68676 Revision: 22-Apr-08
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Si3407DV_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 17.2094 42.2863 33.4586 17.0457 Ambient 1.7394 9.1475 1.1711 116.5100
Case Case
Foot 3.1928 9.9031 9.8906 7.0135 Foot 477.0639 2.5542 692.2275 33.3637
Thermal Capacitance (Joules/°C)
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Document Number: 68676 Revision: 22-Apr-08
Si3407DV_RC
Document Number: 68676 Revision: 22-Apr-08
www.vishay.com
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