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R-C Thermal Model Parameters

R-C THERMAL MODEL FOR TANK CONFIGURATION

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included. When implemented in P-SPICE, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET.
These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform."
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 3.9727 13.6937 14.5078 52.8258 Ambient 6.3003 m 125.2802 m 67.4477 m 1.3601 Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 727.6000 m 5.6278 9.0990 5.5456 Foot 7.7219 m 66.4017 m 259.9112 m 8.6418 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 68649 Revision: 11-Apr-08
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Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 5.9390 25.3353 32.1054 21.6203 Ambient 6.6889 m 35.4471 m 959.2908 m 1.9176
Foot 1.2138 6.9495 6.9660 5.8707 Foot 2.9141 m 4.8120 m 61.3961 m 294.9013 m
Thermal Capacitance (Joules / °C)
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Document Number: 68649 Revision: 11-Apr-08
Vishay Siliconix
Document Number: 68649 Revision: 11-Apr-08
www.vishay.com 3