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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4170DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-SPICE, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET.
These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.9727 13.6937 14.5078 52.8258 Ambient 6.3003 125.2802 67.4477 1.3601 Case Case Foot 727.6000 5.6278 9.0990 5.5456 Foot 7.7219 66.4017 259.9112 8.6418
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68649 Revision: 11-Apr-08
www.vishay.com
Si4170DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.9390 25.3353 32.1054 21.6203 Ambient 6.6889 35.4471 959.2908 1.9176
Case Case
Foot 1.2138 6.9495 6.9660 5.8707 Foot 2.9141 4.8120 61.3961 294.9013
Thermal Capacitance (Joules/°C)
www.vishay.com
Document Number: 68649 Revision: 11-Apr-08
Si4170DY_RC
Document Number: 68649 Revision: 11-Apr-08
www.vishay.com

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