Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Si4126DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-SPICE, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET.
These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 3.4518 2.8153 19.7307 54.0022 Ambient 10.4569 109.5078 75.9940 1.4180 Case Case Foot 2.5449 2.7347 3.7406 6.9798 Foot 31.7638 22.5244 178.1872 247.7640
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68648 Revision: 11-Apr-08
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Si4126DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 8.8872 11.2936 9.5870 50.2322 Ambient 20.8519 28.4259 138.3911 1.3353
Case Case
Foot 1.8545 4.9707 3.1329 6.0419 Foot 9.2263 5.9185 81.4820 111.9932
Thermal Capacitance (Joules/°C)
www.vishay.com
Document Number: 68648 Revision: 11-Apr-08
Si4126DY_RC
Document Number: 68648 Revision: 11-Apr-08
www.vishay.com

Thermal Model Parameters DESCRIPTION parametric values thermal mo

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