Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Si7994DP_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 15.6312 40.8698 21.7919 6.7071 Ambient 72.2258 1.9882 1.3539 6.7570 Case 43.9707 1.2169 321.0293 1.1181 Case 24.4063 1.2080 2.1222 12.5919 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68625 Revision: 25-Mar-08
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Si7994DP_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.1626 14.4537 15.8360 47.5477 Ambient 5.4167 49.2744 358.5101 902.0871
Case 1.5045 123.6809 819.1907 252.6284 Case 1.0552 14.4672 2.9659 3.5436
Foot Foot
Thermal Capacitance (Joules/°C)
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Document Number: 68625 Revision: 25-Mar-08
Si7994DP_RC
Document Number: 68625 Revision: 25-Mar-08
www.vishay.com

Thermal Model Parameters DESCRIPTION parametric values thermal mo

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