Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Si4835DDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 19.6743 4.3622 12.7439 48.2196 Ambient 85.3171 2.5285 31.8170 1.1858 Case Case Foot 6.0221 6.4683 7.8603 1.6493 Foot 324.3835 60.2742 8.5831 700.8624
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68620 Revision: 25-Mar-08
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Si4835DDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 6.8085 18.7155 15.4977 43.9783 Ambient 3.6045 21.7645 81.8055 1.2141
Case Case
Foot 2.2073 7.8817 5.1917 6.7193 Foot 783.3043 6.6236 17.1963 182.1568
Thermal Capacitance (Joules/°C)
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Document Number: 68620 Revision: 25-Mar-08
Si4835DDY_RC
Document Number: 68620 Revision: 25-Mar-08
www.vishay.com

Thermal Model Parameters DESCRIPTION parametric values thermal mo

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