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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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SUR50N03-09P_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 2.5763 31.2081 8.0202 8.1954 Ambient 11.2639 2.7646 145.4368 3.2066 Case 133.5765 1.0011 456.1761 709.1474 Case 19.6845 14.6626 407.8944 1.1905 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68374 Revision: 04-Jan-08
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SUR50N03-09P_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 1.8277 6.0938 11.0883 30.9902 Ambient 5.0713 57.0071 516.8005 1.8912
Case 51.7292 736.5805 938.6449 573.0454 Case 225.2917 816.4115 7.3385 185.9688
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 68374 Revision: 04-Jan-08
SUR50N03-09P_RC
Document Number: 68374 Revision: 04-Jan-08
www.vishay.com

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