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R-C Thermal Model Parameters

R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

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R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient Mosfet 28.2299 13.6699 25.0926 43.0076 Ambient Mosfet 2.2902 m 103.0879 u 41.0625 m 1.1333 Ambient Schottky 13.2141 15.5933 16.7952 39.3974 Ambient Schottky 53.2786 u 1.2006 m 28.3033 m 894.4606 m Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A Case Mosfet 2.2722 2.0701 9.3065 2.3512 Case Mosfet 1.3976 m 56.1708 u 110.4543 u 1.5513 m Case Schottky 5.3471 1.7427 3.9683 5.9419 Case Schottky 745.9934 u 50.2230 u 209.3649 u 1.7658 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 68346 Revision: 18-Jan-08
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R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient Mosfet 14.2316 31.2017 23.4768 41.0899 Ambient Mosfet 92.0097 u 2.0230 m 43.4126 m 1.1315
Ambient Schottky 16.7469 17.1679 14.6943 36.3909 Ambient Schottky 61.1928 u 2.1028 m 59.4980 m 945.9847 m
Case Mosfet 8.7935 3.8630 1.7348 1.6087 Case Mosfet 44.6639 u 233.0753 u 111.8383 u 532.2817 u
Case Schottky 5.7550 7.7276 1.9243 1.5931 Case Schottky 53.3243 u 369.2262 u 829.0503 u 9.9427 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 68346 Revision: 18-Jan-08
Vishay Siliconix
Document Number: 68346 Revision: 18-Jan-08
www.vishay.com 3
Vishay Siliconix
www.vishay.com 4
Document Number: 68346 Revision: 18-Jan-08