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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si4626ADY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 5.6033 14.2956 14.6312 50.4699 Ambient 6.2085 59.4383 200.9402 1.6659 Case Case Foot 1.0089 6.2588 8.7633 4.9690 Foot 1.9159 58.4572 202.2141 13.7388
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68343 Revision: 03-Jan-08
www.vishay.com
Si4626ADY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.1116 25.2038 27.9267 24.7579 Ambient 7.0458 38.2466 1.0365 1.9145
Case Case
Foot 1.6856 7.5612 6.2786 5.4746 Foot 2.3251 8.7568 56.5823 178.8429
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 68343 Revision: 03-Jan-08
Si4626ADY_RC
Document Number: 68343 Revision: 03-Jan-08
www.vishay.com

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