Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si4104DY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 14.7844 5.5708 19.9741 44.4130 Ambient 28.9676 2.0345 123.3055 1.4534 Case Case Foot 7.0563 1.4543 2.8867 13.6027 Foot 5.9640 387.3306 716.4164 51.9075
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68342 Revision: 03-Jan-08
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Si4104DY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 5.5766 19.7812 19.2375 40.4047 Ambient 1.5663 18.1329 114.0489 1.4831
Case Case
Foot 2.8147 9.4510 7.3407 5.3936 Foot 770.0395 7.5960 56.3411 38.4668
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 68342 Revision: 03-Jan-08
Si4104DY_RC
Document Number: 68342 Revision: 03-Jan-08
www.vishay.com
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