Download

PDF Abstract Text:

R-C Thermal Model Parameters

R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"1. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 14.7844 5.5708 19.9741 44.4130 Ambient 28.9676 m 2.0345 m 123.3055 m 1.4534 Case N / A N / A N / A N / A Case N / A N / A N / A N / A Foot 7.0563 1.4543 2.8867 13.6027 Foot 5.9640 m 387.3306 u 716.4164 m 51.9075 m
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 68342 Revision: 03-Jan-08
www.vishay.com 1
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 5.5766 19.7812 19.2375 40.4047 Ambient 1.5663 m 18.1329 m 114.0489 m 1.4831
Foot 2.8147 9.4510 7.3407 5.3936 Foot 770.0395 u 7.5960 m 56.3411 m 38.4668 m
Thermal Capacitance (Joules / °C)
Reference: 1 "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com 2
Document Number: 68342 Revision: 03-Jan-08
Vishay Siliconix
Document Number: 68342 Revision: 03-Jan-08
www.vishay.com 3