Thermal Model Parameters DESCRIPTION parametric values thermal mo
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Si8417DB_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 14.1987 13.4985 7.2391 37.0637 Ambient 9.1933 1.3008 1.1522 1.8243 Case Case Foot 2.3864 7.0958 1.8619 8.6559 Foot 1.6637 3.8613 100.1966 5.0436
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68338 Revision: 19-Dec-07
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Si8417DB_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 14.4487 13.0397 14.2175 30.2941 Ambient 1.0284 6.0241 580.7078 1.4614
Case Case
Foot 6.1334 8.6330 4.0416 1.1920 Foot 907.6343 1.6859 166.2879 183.8196
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 68338 Revision: 19-Dec-07
Si8417DB_RC
Document Number: 68338 Revision: 19-Dec-07
www.vishay.com
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