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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si9407BDY_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 6.5184 16.2404 19.9854 42.2558 Ambient 836.8388 21.3638 261.7478 1.9472 Case Case Foot 2.8857 10.0216 7.1811 4.9116 Foot 287.4216 12.0686 178.4418 2.9403
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68337 Revision: 19-Dec-07
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Si9407BDY_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 7.9911 18.0935 22.5713 36.3441 Ambient 944.8440 21.6792 232.9034 1.9964
Case Case
Foot 3.3048 8.5179 8.9650 4.2123 Foot 221.9511 2.2687 20.2984 340.2701
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 68337 Revision: 19-Dec-07
Si9407BDY_RC
Document Number: 68337 Revision: 19-Dec-07
www.vishay.com

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