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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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SUU50N03-09P_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 1.2839 5.6295 4.4594 38.6272 Ambient 3.1358 335.5095 74.4426 1.6416 Case 720.1509 725.7932 285.9288 568.1271 Case 54.9013 1.2743 1.0835 11.3136 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68326 Revision: 19-Dec-07
www.vishay.com
SUU50N03-09P_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 2.1446 4.9123 8.2095 34.7336 Ambient 4.5243 56.0086 289.9055 1.4603
Case 876.7216 403.2605 398.5555 621.4624 Case 1.0964 9.6102 401.2585 171.7456
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 68326 Revision: 19-Dec-07
SUU50N03-09P_RC
Document Number: 68326 Revision: 19-Dec-07
www.vishay.com

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