Thermal Model Parameters DESCRIPTION parametric values thermal mo

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Thermal Model Parameters DESCRIPTION parametric values thermal mo

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SUP52N20-39P_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient Ambient Case 60.2490 91.3718 62.2568 286.1224 Case 140.6231 97.9004 10.6209 170.7370 Foot Foot
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68318 Revision: 19-Dec-07
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SUP52N20-39P_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient Ambient
Case 5.8664 85.4380 188.2646 220.4310 Case 6.3387 3.5782 30.5669 137.2151
Foot Foot
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
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Document Number: 68318 Revision: 19-Dec-07
SUP52N20-39P_RC
Document Number: 68318 Revision: 19-Dec-07
www.vishay.com

Thermal Model Parameters DESCRIPTION parametric values thermal mo

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