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Thermal Model Parameters DESCRIPTION parametric values thermal mo


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Si1905BDH_RC
Thermal Model Parameters
DESCRIPTION parametric values thermal model have been derived using curve-fitting techniques. These techniques described Simple Method Generating Thermal Models Power MOSFET"[1]. When implemented P-Spice, these values have matching characteristic curves Single Pulse Transient Thermal Impedance curves MOSFET.
values electrical circuit Foster/Tank Cauer/Filter configurations included.
Note:
detailed explanation implementing these values P-SPICE, refer Application Note AN609 Thermal Simulations Power MOSFETs P-SPICE Platform.
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient 44.0773 31.2189 265.2248 119.4790 Ambient 1.4079 147.3951 3.2833 919.9911 Case Case Foot 86.4684 127.1242 117.3069 19.1005 Foot 572.6423 5.2228 2.8820 44.2333
Thermal Capacitance (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 68303 Revision: 19-Dec-07
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Si1905BDH_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction
Note: indicates applicable
Ambient 100.3782 251.2865 71.8884 36.4469 Ambient 227.1993 1.4212 19.6820 2.1078
Case Case
Foot 20.1651 146.1682 133.4933 50.1734 Foot 41.8899 388.0249 2.2720 133.3266
Thermal Capacitance (Joules/°C)
Reference: Simple Method Generating Thermal Models Power MOSFET" Wharton McDaniel Kandarp Pandya, IEEE SEMITHERM 2002
www.vishay.com
Document Number: 68303 Revision: 19-Dec-07
Si1905BDH_RC
Document Number: 68303 Revision: 19-Dec-07
www.vishay.com

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