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Thermal Model Parameters parametric values thermal model have bee


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SiB457EDK_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/tank Cauer/filter configurations included. When implemented P-SPICE, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described application note AN609, "Thermal Simulation Power MOSFETs P-SPICE Platform".
THERMAL MODEL TANK CONFIGURATION
(Junction)
(Ambient)
VALUES TANK CONFIGURATION
THERMAL RESISTANCE (°C/W) Junction Junction Note indicates applicable Ambient 27.1864 10.1627 16.3707 51.2802 Ambient 2.8363 158.1715 138.5954 1.5909 Case 322.3634 151.4366 4.6136 4.4126 Case 73.1634 10.6415 70.1494 358.6033 Foot Foot
THERMAL CAPACITANCE (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product datasheet. Designers should refer appropriate datasheet same number guaranteed specification limits.
Document Number: 64843 Revision: 02-Apr-09
www.vishay.com
SiB457EDK_RC
THERMAL MODEL FILTER CONFIGURATION
(Junction)
(Ambient)
VALUES FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W) Junction Junction Note indicates applicable Ambient 14.5834 27.1067 18.9512 44.3587 Ambient 213.8201 4.0714 240.7063 1.6975 Case 2.7405 4.8557 159.5000 1.7443 Case 32.0110 77.9058 542.5505 15.9981 Foot Foot
THERMAL CAPACITANCE (Joules/°C)
www.vishay.com
Document Number: 64843 Revision: 02-Apr-09
SiB457EDK_RC
Document Number: 64843 Revision: 02-Apr-09
www.vishay.com

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