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Thermal Model Parameters parametric values thermal model have bee


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SiB900EDK_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/tank Cauer/filter configurations included. When implemented P-SPICE, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described application note AN609, "Thermal Simulation Power MOSFETs P-SPICE Platform".
THERMAL MODEL TANK CONFIGURATION
(Junction)
(Ambient)
VALUES TANK CONFIGURATION
THERMAL RESISTANCE (°C/W) Junction Junction Note indicates applicable Ambient 24.9534 32.7083 31.3409 35.9974 Ambient 33.7833 492.0543 7.4869 732.1349 Case 17.2996 12.4294 753.4000 9.5176 Case 180.6510 527.3307 72.2282 36.5543 Foot Foot
THERMAL CAPACITANCE (Joules/°C)
This document intended SPICE modeling guideline does constitute commercial product datasheet. Designers should refer appropriate datasheet same number guaranteed specification limits.
Document Number: 64837 Revision: 31-Mar-09
www.vishay.com
SiB900EDK_RC
THERMAL MODEL FILTER CONFIGURATION
(Junction)
(Ambient)
VALUES FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W) Junction Junction Note indicates applicable Ambient 25.5146 34.1097 29.7392 35.6365 Ambient 28.7791 353.6025 6.7208 717.4945 Case 14.8268 19.3796 5.6687 124.9000 Case 29.3109 123.6870 813.3045 278.1963 Foot Foot
THERMAL CAPACITANCE (Joules/°C)
www.vishay.com
Document Number: 64837 Revision: 31-Mar-09
SiB900EDK_RC
Document Number: 64837 Revision: 31-Mar-09
www.vishay.com

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