P-Channel 30-V (D-S) MOSFET FEATURES (Typ.) PRODUCT SUM

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P-Channel 30-V (D-S) MOSFET FEATURES (Typ.) PRODUCT SUM

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Si7145DP
P-Channel 30-V (D-S) MOSFET
FEATURES
(Typ.)
PRODUCT SUMMARY
RDS(on) 0.0026 0.00375
PowerPAK SO-8
Halogen-free According 61249-2-21 Definition TrenchFET® Power MOSFET Tested Tested Compliant RoHS Directive 2002/95/EC
APPLICATIONS
6.15
5.15
Adaptor Switch Notebook Computers
Bottom View
P-Channel MOSFET
Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free Halogen-free)
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Symbol Limit 36.5a, 29.2a, 5.6a, 66.6 6.25a, 4.0a, Unit
Continuous Drain Current
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature)e,
Tstg
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, Maximum Junction-to-Case Steady State Symbol RthJA RthJC Typical Maximum Unit °C/W
Notes: Surface mounted board. Maximum under Steady State conditions °C/W. Package limited. Solder Profile (www.vishay.com/doc?73257). PowerPAK SO-8 leadless package. lead terminal exposed copper (not plated) result singulation process manufacturing. solder fillet exposed copper cannot guaranteed required ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with soldering iron recommended leadless components. Document Number: 64814 S09-0872-Rev. 18-May-09 www.vishay.com
Si7145DP
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time dI/dt A/µs, 0.69 VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) Ciss Coss Crss td(on) td(off) td(on) td(off) VGEN VGEN VGS, 0.0021 0.0030 1335 1570 0.0026 0.00375 mV/°C Symbol Test Conditions Min. Typ. Max. Unit
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 64814 S09-0872-Rev. 18-May-09
Si7145DP
TYPICAL CHARACTERISTICS unless otherwise noted
thru Drain Current Drain Current
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.0035 DS(on) On-Resistance 0.0031 Capacitance (pF)
Transfer Characteristics
Ciss
0.0027
0.0023
8000
0.0019
4000 Crss
Coss
0.0015
Drain Current
Drain-to-Source Voltage
On-Resistance Drain Current
Gate-to-Source Voltage DS(on) On-Resistance
Capacitance
(Normalized)
Total Gate Charge (nC)
Junction Temperature (°C)
Gate Charge Document Number: 64814 S09-0872-Rev. 18-May-09
On-Resistance Junction Temperature
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Si7145DP
TYPICAL CHARACTERISTICS unless otherwise noted
DS(on) On-Resistance Source Current 0.012 0.015
0.009
0.006 0.003
0.01
0.001
0.000
Source-to-Drain Voltage
Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
On-Resistance Gate-to-Source Voltage
VGS(th) Variance Power
0.001 0.01 Time
Temperature (°C)
Threshold Voltage
Limited RDS(on)*
Single Pulse Power, Junction-to-Ambient
Drain Current Single Pulse 0.01 0.01 BVDSS Limited
Drain-to-Source Voltage minimum which RDS(on) specified
Safe Operating Area www.vishay.com Document Number: 64814 S09-0872-Rev. 18-May-09
Si7145DP
MOSFET TYPICAL CHARACTERISTICS unless otherwise noted
Drain Current
Package Limited
Case Temperature (°C)
Current Derating*
Power
Power
Case Temperature (°C)
Ambient Temperature (°C)
Power, Junction-to-Case
Power Derating, Junction-to-Ambient
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 64814 S09-0872-Rev. 18-May-09
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Si7145DP
TYPICAL CHARACTERISTICS unless otherwise noted
Duty Cycle Normalized Effective Transient Thermal Impedance
0.05
Duty Cycle, Notes:
0.02 Single Pulse 0.01 Square Wave Pulse Duration
Unit Base RthJA °C/W PDMZthJA(t) Surface Mounted
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle Normalized Effective Transient Thermal Impedance
0.02 Single Pulse
0.05
0.01 Square Wave Pulse Duration
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data, www.vishay.com/ppg?64814.
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Document Number: 64814 S09-0872-Rev. 18-May-09
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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P-Channel 30-V (D-S) MOSFET FEATURES (Typ.) PRODUCT SUM

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