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Thermal Model Parameters parametric values thermal model have bee


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SiZ700DT_RC
Thermal Model Parameters
parametric values thermal model have been derived using curve-fitting techniques. values electrical circuit Foster/Tank Cauer/Filter configurations included. When implemented P-Spice, these values have matching characteristic curves single-pulse transient thermal impedance curves MOSFET. These values used P-SPICE simulation evaluate thermal behavior MOSFET junction temperature under defined power profile. These techniques described Application Note AN609, "Thermal Simulation Power MOSFETs P-Spice Platform."
THERMAL MODEL TANK CONFIGURATION
VALUES TANK CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Ambient CH-1 18.7782 5.5394 21.3889 44.2935 Ambient CH-1 9.4822 671.5252 107.2256 1.5017 Ambient CH-2 21.2358 5.2959 17.4498 41.0185 Thermal Capacitance (Joules/°C) Ambient CH-2 29.2501 4.4079 499.0944 1.8621 Case CH-1 1.9498 7.2565 163.9561 2.1310 Case CH-2 18.1402 21.7015 391.1266 13.2292 Case CH-1 719.3808 3.5404 945.5192 1.8947 Case CH-2 431.7870 2.2916 662.7130 1.2139
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits.
Document Number: 64749 Revision: 06-Feb-09
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SiZ700DT_RC
THERMAL MODEL FILTER CONFIGURATION
VALUES FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction Junction Note indicates applicable Ambient CH-1 7.9487 25.6968 21.3108 35.0437 Ambient CH-1 874.0697 12.2432 235.5351 1.8585 Ambient CH-2 5.9283 20.9732 21.8432 36.2553 Thermal Capacitance (Joules/°C) Ambient CH-2 3.1483 20.7628 270.2771 1.6348 Case CH-1 122.5962 828.4264 366.3302 8.5275 Case CH-2 249.9928 4.2109 14.4287 8.1428 Case CH-1 1.1847 1.6396 1.5602 2.7155 Case CH-2 552.8873 2.2431 527.3127 1.2767
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Document Number: 64749 Revision: 06-Feb-09
SiZ700DT_RC
Document Number: 64749 Revision: 06-Feb-09
www.vishay.com
SiZ700DT_RC
www.vishay.com
Document Number: 64749 Revision: 06-Feb-09

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