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Mosfet, Power MOSFET

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R-C Thermal Model Parameters


R-C THERMAL MODEL FOR TANK CONFIGURATION

Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster / Tank and Cauer / Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform."
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C / W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 6.7576 21.1495 24.0061 38.0868 Ambient 145.1424 u 4.8991 m 66.6787 m 2.0947 Case 2.7069 3.1902 1.0821 4.0208 Case 143.3466 u 1.8014 m 16.4210 m 588.0983 u Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A
Thermal Capacitance (Joules / °C)
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 64706 Revision: 16-Dec-08
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Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C / W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note NA indicates not applicable Ambient 7.4708 23.6972 22.7296 36.1024 Ambient 166.6218 u 4.5296 m 70.2944 m 2.1608 Case 3.0560 3.6118 1.8070 2.5252 Case 94.1619 u 157.8502 u 663.0335 u 780.8632 u Foot N / A N / A N / A N / A Foot N / A N / A N / A N / A
Thermal Capacitance (Joules / °C)
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Document Number: 64706 Revision: 16-Dec-08
Vishay Siliconix
Document Number: 64706 Revision: 16-Dec-08
www.vishay.com 3