SATURATION VOLTAGE POWER TRANSISTOR saturation voltage with equiv

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SATURATION VOLTAGE POWER TRANSISTOR saturation voltage with equiv

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UNISONIC TECHNOLOGIES CO., UP1868
SATURATION VOLTAGE POWER TRANSISTOR
saturation voltage with equivalent on-resistance RCE(SAT) about High gain that replace parts power MOSFET.
SILICON TRANSISTOR
SOT-223
*Pb-free plating product number: UP1868L
ORDERING INFORMATION Order Number Normal Lead Free Plating
UP1868-AA3-R UP1868L-AA3-R
Package
SOT-223
Assignment
Packing Tape Reel
UP1868L-AA3-R
(1)Packing Type (2)Package Type (3)Lead Plating
Tape Reel AA3: SOT-223 Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co.,
QW-R207-015,A
UP1868
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SILICON TRANSISTOR
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Peak Pulse Current IC(PEAK) Continuous Collector Current Power Dissipation Junction Temperature +150 Storage Temperature TSTG +150 Note Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied.
ELECTRICAL CHARACTERISTICS unless otherwise specified)
SYMBOL TEST CONDITIONS BVCBO IC=-100µA Breakdown Voltage (Note) BVCEO IC=-10mA BVEBO IE=-100µA IC=-500mA,IB=-5mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-50mA (Note) IC=-6A, IB=-250mA Base-Emitter Saturation Voltage VBE(SAT) IC=-6A, IB=-250mA Base-Emitter Turn-On Voltage (Note) VBE(ON) VCE=-1V, IC=-6A VCB=-12V Collector Cut-Off Current ICBO VCB=-12V,Ta=100 Emitter Cut-Off Current IEBO VEB=-6V hFE1 VCE=-1V IC=-10mA hFE2 VCE=-1V IC=-500mA Current Gain (Note) hFE3 VCE=-1V IC=-5mA hFE4 VCE=-1V IC=-10A Current Gain Bandwidth Product VCE=-10V, IC=-100mA, f=50MHz Output Capacitance VCB=-20V, f=1MHz IC=-4A, IB1=-400mA Switching Times IB2=400mA, VCC=-10V tOFF Note: Pulse test: Pulse Width=300µs, Duty Cycle2% PARAMETER UNIT -100 -132 -160 -440 -1050 -1200 -950 -1050 -1.0 1000
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R207-015,A
UP1868
TYPICAL CHARACTERISTICS
VCE(SAT
Saturation Voltage, VCE(SAT) Saturation Voltage, VCE(SAT)(V)
SILICON TRANSISTOR
VCE(SAT C/IB=50
+100
IC/I B=200 IC/I B=100 IC/I B=50
100m
100m
Collector Current,
Collector Current
VCE=1V
Saturation Voltage, VBE(SAT)(V)
VBE(SAT) IC/IB +100
+100
Current Gain,
100m
100m
Collector Current,
Collector Current
VBE(ON) VCE=1V +100
Safe Operating Area
Turn Voltage, VBE(ON)
Collector Current, IC(A)
10ms 100µs
100m
Collector Current,
Collector Emitter Voltage, VCE(V)
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R207-015,A
UP1868
SILICON TRANSISTOR
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R207-015,A

SATURATION VOLTAGE POWER TRANSISTOR saturation voltage with equiv

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