RDS(ON) @VGS capacitance Optimized gate charge Fast switching capabili
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UNISONIC TECHNOLOGIES CO., UT45N03
RDS(ON) @VGS capacitance Optimized gate charge Fast switching capability Avalanche energy specified
Power MOSFET
SYMBOL
2.Drain *Pb-free plating product number: UT45N03L 1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating UT45N03-TN3-R UT45N03L-TN3-R UT45N03-TN3-T UT45N03L-TN3-T Package TO-252 TO-252 Assignment Packing Tape Reel Tube
www.unisonic.com.tw Copyright 2008 Unisonic Technologies Co.,
QW-R502-165.A
UT45N03
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current Pulsed Drain Current (Note Total Power Dissipation Junction Temperature +175 Storage Temperature TSTG +175 Note: Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied.
THERMAL DATA
PARAMETER Junction Ambient SYMBOL UNIT °C/W
ELECTRICAL CHARACTERISTICS =25°C, unless otherwise specified)
PARAMETER CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Drain-Source Breakdown Voltage CHARACTERISTICS Gate-Threshold Voltage Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS=0V, ID=250µA VDS=25V, =0V, =VGS, VGS=5V, ID=25A VGS=10V, ID=25A VGS=3.5V, ID=5.2A 0.05 17.5 0.95 UNIT
DYNAMICCHARACTERISTICS Input Capacitance CISS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time Total Gate Charge =24V,VGS =5V, Gate-to-Source Charge Gate-to-Drain Charge SOURCE- DRAIN DIODE RATINGS CHARACTERISTICS Drain-Source Diode Forward Voltage IS=25A,VGS=0V Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Notes: Pulse width limited TJ(MAX) Pulse width 300us, duty cycle
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-165.A
UT45N03
TYPICAL CHARACTERISTICS
Output Characteristics 2.5V VGS=2V Drain-Source Voltage,
Normalized Total Power Dissipation
Power MOSFET
Transfer Characteristics
3.5V
TJ=25
TJ=25
Gate-Source Voltage,
Normalized Continuous Drain Current
Normalized Power Dissipation, Pder
Pder= PD(25°C) Temperature,
Normalized Continuous Drain Current,
Ider= Temperature, ID(25°C)
Gate-Threshold Voltage, VGS(TH)(V)
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
Current Drain,
QW-R502-165.A
UT45N03
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
Drain Current,
ZthJmb (K/W)
Gate-Source Voltage,
C(pF)
Source Current,
RDS(ON)
QW-R502-165.A
UT45N03
Power MOSFET
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-165.A
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