UT3401Z P-channel enhancement mode Power MOSFET, designed with high de
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UNISONIC TECHNOLOGIES CO., UT3401Z
UT3401Z P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, on-resistance, excellent thermal electrical capabilities operation with gate voltages. This device suitable load switch applications.
Power MOSFET
SOT-23
SYMBOL
Lead-free: UT3401ZL Halogen-free:UT3401ZG
ORDERING INFORMATION
Normal UT3401Z-AE3-R Ordering Number Lead Free Plating Halogen Free UT3401ZL-AE3-R UT3401ZG-AE3-R Package SOT-23 Assignment Packing Tape Reel
MARKING
Lead Free Halogen Free
www.unisonic.com.tw Copyright 2009 Unisonic Technologies Co.,
QW-R502-163.C
UT3401Z
ABSOLUTE MAXIMUM RATINGS 25°C, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous (Note2) Pulsed (Note3) SYMBOL VDSS VGSS
Power MOSFET
RATINGS
UNITS
-4.2 Drain Current Power Dissipation (Note ESD(HBM) ±100 Junction Temperature +150 Storage Temperature TSTG +150 Notes: Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied. Pulse width limited TJ(MAX) Pulse width 300µs, duty cycle
THERMAL DATA
PARAMETER Junction Ambient SYMBOL UNIT °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=-250A, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=-250A VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A ±100 -0.7 38.2 -0.75 -2.2 20.2 11.2 -1.3 UNIT
DYNAMIC PARAMETERS Input Capacitance CISS =0V, =-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note tD(ON) VGS=-10V, VDS=-15V Turn-ON Rise Time RL=3.6, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time Total Gate Charge (Note VGS=-4.5V, VDS=-15V, ID=-4A Gate-Source Charge Gate-Drain Charge SOURCE- DRAIN DIODE RATINGS CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VDS=0V, IS=-1A Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time IF=-4A, dI/dt=100A/s Reverse Recovery Charge Notes: Pulse width limited TJ(MAX) Pulse width 300µs, duty cycle Surface mounted copper board
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-163.C
UT3401Z
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current,
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
Continuous Drain Current,
QW-R502-163.C
UT3401Z
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate-Source Voltage, -VGS
Maximum Forward Biased Safe Operating Area 100.0 Continuous Drain Current, TJ(Max)=150°C TA=25°C
Capacitance (pF)
Single Pulse Power Rating Junction-to-Ambient TJ(MAX)=150°C TA=25°C
100s Power
RDS(ON) 10.0 limited
0.1s
10ms
0.001 0.01 1000
Drain-Source Voltage, -VDS
Pulse Width
Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse Width 1000
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-163.C
UT3401Z
Power MOSFET
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-163.C
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