UT3401 P-channel enhancement mode Power MOSFET, designed with high den

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

UT3401 P-channel enhancement mode Power MOSFET, designed with high den

Datasheet Thumbnail

Top Searches for this datasheet

UNISONIC TECHNOLOGIES CO., UT3401
UT3401 P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, on-resistance, excellent thermal electrical capabilities, operation with gate voltages. This device suitable load switch applications.
Power MOSFET
SYMBOL
3.Drain
2.Gate
Lead-free: UT3401L Halogen-free: UT3401G
1.Source
ORDERING INFORMATION
Normal UT3401-AE3-R Ordering Number Lead Free UT3401L-AE3-R Halogen Free UT3401G-AE3-R Package SOT-23 Assignment Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright 2008 Unisonic Technologies Co.,
QW-R502-109.D
UT3401
ABSOLUTE MAXIMUM RATINGS unless otherwise specified)
PARAMETER Drain-Source Voltage SYMBOL VDSS
Power MOSFET
RATINGS
UNITS
Gate-Source Voltage VGSS Continuous Drain Current (Note -4.2 Pulsed Drain Current (Note Power Dissipation (Note Junction Temperature +150 Storage Temperature TSTG +150 Note: Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied.
THERMAL DATA
PARAMETER Junction-to-Ambient SYMBOL UNIT °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=-250A, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=-250A VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A ±100 -0.7 38.2 -0.75 -2.2 20.2 11.2 -1.3 UNIT
DYNAMIC PARAMETERS Input Capacitance CISS =0V, =-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note tD(ON) Turn-ON Rise Time VGS=-10V, VDS=-15V RL=3.6, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time Total Gate Charge (Note VGS=-4.5V, VDS=-15V, ID=-4A Gate-Source Charge Gate-Drain Charge SOURCE- DRAIN DIODE RATINGS CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VDS=0V, IS=-1A Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time IF=-4A, dI/dt=100A/s Reverse Recovery Charge Note: Pulse width limited TJ(MAX) Pulse width 300us, duty cycle Surface mounted copper board
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109.D
UT3401
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current,
Continuous Drain Current,
On-Resistance Drain Current Gate Voltage
On-Resistance Junction Temperature
ID=-3.5A, VGS=-10V
-2.5V -4.5V
VGS=-2.5V ID=-1A
0.00 2.00 4.00 6.00 8.00 10.00 Drain Current Temperature (°C)
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109.D
UT3401
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate-Source Voltage, -VGS
Continuous Drain Current,
Capacitance (pF)
Normalized Transient Thermal Resistance,
Normalized Maximum Transient Thermal Impedance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
1000
Pulse Width
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
Power
QW-R502-109.D
UT3401
Power MOSFET
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-109.D

UT3401 P-channel enhancement mode Power MOSFET, designed with high den

Top Searches for this datasheet

Other recent searches