N-CHANNEL POWER MOSFET UML2502 uses advanced trench technology pr

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-CHANNEL POWER MOSFET UML2502 uses advanced trench technology pr

Datasheet Thumbnail

Top Searches for this datasheet

UNISONIC TECHNOLOGIES CO., UML2502
N-CHANNEL POWER MOSFET
UML2502 uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages. This device suitable load switch applications.
Power MOSFET
FEATURES
RDS(ON) 45m@VGS 4.5V RDS(ON) 80m@VGS 2.5V Ultra gate charge (max. 12nC reverse transfer capacitance CRSS typical 66pF Fast switching capability Avalanche energy specified Improved dv/dt capability
SYMBOL
3.Drain
*Pb-free plating product number:UML2505L
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating UML2502-AE3-R UML2502L-AE3-R Package SOT-23 Assignment Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright 2008 Unisonic Technologies Co.,
QW-R502-227.A
UML2502
ABSOLUTE MAXIMUM RATINGS =25, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=4.5V Pulsed Drain Current (Note Maximum Power Dissipation Linear Derating Factor SYMBOL VDSS VGSS
Power MOSFET
RATINGS UNIT 1.25 0.01 Junction Temperature +150 Storage Temperature TSTG +150 Note: Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied. Pulse width limited TJ(MAX)
THERMAL DATA
PARAMETER Junction-to-Ambient SYMBOL UNIT
ELECTRICAL CHARACTERISTICS =25, unless otherwise specified)
PARAMETER SYMBOL CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient BVDSS/TJ CHARACTERISTICS Gate Threshold Voltage VGS(TH) Drain-Source On-State Resistance (Note) RDS(ON) TEST CONDITIONS VGS=0V, ID=250A VGS=0V, VDS=16V VGS=±12V, VDS=0V Reference ID=1mA VDS=VGS, ID=250µA VGS=4.5V, ID=4.2A VGS=2.5V, ID=3.6A ±100 0.01 UNIT
DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=15V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time VDS=10V, RG=6, RD=10, ID=1.0A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time Total Gate Charge (Note) VGS=5.0V, VDS=10V, Gate Source Charge ID=4.0A Gate Drain Charge SOURCE- DRAIN DIODE RATINGS CHARACTERISTICS VGS=0V, IS=1.3A, TJ=25 Diode Forward Voltage (Note) Maximum Pulsed Drain-Source Diode Forward Current Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Notes: Pulse width 300s; duty cycle IF=1.3A, dI/dt=100A/s, TJ=25 (Note)
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-227.A
UML2502
TYPICAL CHARACTERISTICS
Drain Current Source Drain Voltage 1200 1000 Source Drain Voltage,VSD (mV)
tD(ON)
Power MOSFET
Switching Time Waveforms
tD(OFF)
Drain Current,
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-227.A
UML2502
Power MOSFET
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-227.A

N-CHANNEL POWER MOSFET UML2502 uses advanced trench technology pr

Top Searches for this datasheet

Other recent searches