Metal-on-silicon Shcottky Barrier Surface device type mounting Moistur

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Metal-on-silicon Shcottky Barrier Surface device type mounting Moistur

Datasheet Thumbnail

Top Searches for this datasheet

BAS40 200mW, Schottky Barrier Diode
Metal-on-silicon Shcottky Barrier Surface device type mounting Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate free version RoHS compliant Green compound (Halogen free) with suffix packing code prefix date code
Mechanical Data
Case Flat lead small outline plastic package Terminal: Matte plated, lead free., solderable MIL-STD-202, Method guaranteed High temperature soldering guaranteed: 260°C/10s Weight 0.008gram (approximately)
Dimensions
Unit (mm) 2.80 1.20 0.30 1.80 2.25 0.90 3.00 1.40 0.50 2.00 2.55 1.20
Unit (inch) 0.110 0.047 0.012 0.071 0.089 0.035 0.118 0.055 0.020 0.079 0.100 0.043
0.550
0.022
BAS40
BAS40-04
BAS40-05
BAS40-06
Maximum Ratings Electrical Characteristics
Rating 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note Thermal Resistance (Junction Ambient) Junction Storage Temperature Range (Note Symbol VRRM IFRM IFSM TSTG Value Units °C/W
Electrical Characteristics
Type Number Reverse Breakdown Voltage Forward Voltage 10mA 40mA Symbol V(BR) 0.38 0.50 1.00 Units
Reverse Leakage Current f=1.0MHz VR=1V, Junction Capacitance Reverse Recovery Time IF=IR=10mA, RL=100, IRR=1mA
Notes:1. Test Condition 8.3ms Single half Sine-Wave Superimposed Rated Load (JEDEC Method) Notes:2. Valid provided that electrodes kept ambient temperature
Version
BAS40 200mW, Schottky Barrier Diode
Small Signal Diode Rating Sharacteristic Curves BAS40
FIG.1- POWER DERATING CURVE
PEAK FORWARD SURGE CURRENT. (mA)
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
8.3ms Single Half Sine Wave (JEDEC Method)
POWER DISSIPATION (mW)
AMBIENT TEMPERATURE
NUMBER CYCLES 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
10000
FIG.4- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT. nnA)
INSTANTANEOUS FORWARD CURRENT (mA)
1000
0.01
0.001
0.0001 INSTANTANEOUS FORWARD VOLTAGE (mV)
REVERSE VOLTAGE.
FIG.5- TYPICAL TOTAL CAPACITANCE REVERSE VOLTAGE
1.0MHz
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE. (OC/W)
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE 0.01 PULSE DURATION. (sec)
Version

Metal-on-silicon Shcottky Barrier Surface device type mounting Moistur

Top Searches for this datasheet

Other recent searches