Free from secondary breakdown power drive requirement Ease paralleling

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Free from secondary breakdown power drive requirement Ease paralleling

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VP2106 P-Channel Enhancement-Mode Vertical DMOS
Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds High input impedance high gain Excellent thermal stability Integral source-to-drain diode
Supertex VP2106 enhancement-mode (normallyoff) transistor that utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors, high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally-induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Device VP2106 Package Option TO-92 VP2106N3-G BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min) (mA)
-500
indicates package RoHS compliant (`Green')
Configuration
DRAIN SOURCE
Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature*
Value BVDSS BVDGS ±20V +150
TO-92 (N3)
GATE
Product Marking
2106 YYWW
Year Sealed Week Sealed "Green" Packaging
TO-92 (N3)
300OC
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds.
Package include following marks:
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VP2106
Thermal Characteristics
Package TO-92
(continuous) (mA)
(pulsed) (mA)
Power Dissipation
25OC
C/W)
C/W)
(mA)
(mA)
IDRM
-250
-800
0.74
-250
-800
Notes: (continuous) limited rated
Electrical Characteristics
BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF) Parameter Gate threshold voltage
25OC unless otherwise specified)
-1.5
-1.0 -1.0 0.55 -1.2
-3.5 -100 -1.0 -2.0
Units
Conditions -1.0mA VDS, -1.0mA 20V, Rating Rating, 125°C -10V, -25V -5.0V, -100mA -10V, -500mA -10V, -500mA -25V, 1.0MHz -25V, -500mA, RGEN
Drain-to-source breakdown voltage Change VGS(th) with temperature Gate body leakage Zero gate voltage drain current On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage drop Reverse recovery time
VDS, -1.0mA %/OC
-0.5
mmho -25V, -500mA
-500mA -500mA
Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested.
Switching Waveforms Test Circuit
t(OFF)
INPUT
-10V
PULSE GENERATOR
t(ON)
RGEN
INPUT
td(ON)
td(OFF)
D.U.T. Output
OUTPUT
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VP2106
Typical Performance Curves
-2.0
Output Characteristics
-1.0
Saturation Characteristics
-10V
-1.6
-0.8
(amperes)
-1.2
(amperes)
-10V
-0.6
-0.8
-0.4
-0.4
-0.2
(volts)
(volts)
Transconductance Drain Current
Power Dissipation Ambient Temperature
-55°C
(millisiemens)
25°C
TO-92
(watts)
-1.0
125°C
-0.2 -0.4 -0.6 -0.8
(amperes)
(°C)
Maximum Rated Safe Operating Area
-1.0
TO-92 (pulsed)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (DC)
(amperes)
-0.1
-0.01
-0.001 -0.1
25°C
-1.0 -100
TO-92 1.0W 25°C
0.01
0.001
(volts)
(seconds)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VP2106
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
-1.1
On-Resistance Drain Current
BVDSS (normalized)
RDS(ON) (ohms)
-1.0
-10V
-0.9
-0.2
-0.4
-0.6
-0.8
-1.0
(°C)
Transfer Characteristics
-1.0
(amperes) V(th) Variation with Temperature
-25V
-0.8
-55°C
VGS(th) (normalized)
-0.6
-0.4
25°C
125°C
-0.2
V(th)@
(volts)
Capacitance Drain-to-Source Voltage
(°C)
Gate Drive Dynamic Characteristics
1MHz
-10V -40V
(picofarads)
(volts)
CISS
COSS
CRSS
(volts)
(nanocoulombs)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
RDS(ON) (normalized)
RDS(ON) -10V, 0.5A
(amperes)
VP2106
3-Lead TO-92 Package Outline (N3)
Seating Plane
Front View
Side View
Bottom View
Symbol Dimensions (inches)
.170 .210
.014 .022
.014 .022
.175 .205
.125 .165
.080 .105
.095 .105
.045 .055
.500 .610*
JEDEC Registration TO-92. This dimension specified original JEDEC drawing. value listed reference only. This dimension non-JEDEC dimension. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.
(The package drawing(s) this data sheet reflect most current specifications. latest package outline information
Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com.
©2009 rights reserved. Unauthorized reproduction prohibited.
Doc.# DSFP-VP2106 A012409
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com

Free from secondary breakdown power drive requirement Ease paralleling

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