Free from secondary breakdown power drive requirement Ease paralleling

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Free from secondary breakdown power drive requirement Ease paralleling

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VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs
Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds High input impedance high gain Excellent thermal stability Integral source-to-drain diode
Supertex VP0550 enhancement-mode (normallyoff) transistor that utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors, high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally-induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Device VP0550 Package Option TO-92 VP0550N3-G BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min) (mA)
-500
-100
indicates package RoHS compliant (`Green')
Configuration Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* Value BVDSS BVDGS ±20V -55°C +150°C +300°C
DRAIN SOURCE
GATE
TO-92 (N3)
Product Marking
SiVP YYWW Year Sealed Week Sealed "Green" Packaging TO-92 (N3)
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds.
Package include following marks:
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VP0550
Thermal Characteristics
Package TO-92
(continuous) (mA)
(pulsed) (mA)
Power Dissipation
25OC
C/W)
C/W)
(mA)
(mA)
IDRM
-250
-250
Notes: (continuous) limited rated
Electrical Characteristics 25°C unless otherwise specified)
BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF)
Parameter Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage current Zero gate voltage drain current
-500 -2.0 -100
-240 0.85 -0.8
-4.5 -100 -1000 -1.5
Units
Conditions -1.0mA VDS, -1.0mA VDS, -1.0mA ±20V, Rating Rating, 125OC -5.0V, -25V -10V, -25V -5.0V, -5mA -10V, -10mA -10V, -10mA -25V, -10mA -25V, 1.0MHz -25V, -100mA, RGEN -0.1A -0.1A
On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage drop Reverse recovery time
mmho
Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested.
Switching Waveforms Test Circuit
t(OFF)
td(OFF)
INPUT
-10V
PULSE GENERATOR
RGEN
t(ON)
td(ON)
D.U.T.
INPUT
Output
OUTPUT
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VP0550
Typical Performance Curves
Output Characteristics
-0.5
-100
Saturation Characteristics
-10V
-0.4
-10V
-0.3
(milliamps)
(amperes)
-0.2 -0.1
(volts)
Transconductance Drain Current
(volts)
Power Dissipation Case Temperature
-25V
-55°C
(millisiemens)
(watts)
25°C
150°C
-0.05
-0.10
-0.15
-0.20
-0.25
(amperes)
Maximum Rated Safe Operating Area
-1.0
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
(amperes)
-0.1
TO-92(DC)
-0.01
-0.001
25°C
-100 -1000
25°C
0.01
0.001
(volts)
(seconds)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VP0550
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.15
On-Resistance Drain Current
1.10
BVDSS (normalized)
RDS(ON) (ohms)
1.05
-10V
1.00
0.95
0.90
-0.05 -0.10 -0.15 -0.20 -0.25
(°C)
(amperes) V(th) Variation with Temperature
1.10
Transfer Characteristics
-0.4
-25V
RDS(ON) -10V, -10mA
-0.2
25°C
1.00
0.95
150°C
0.90
V(th) -1mA
0.85
(volts)
(°C)
Capacitance Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10V
1MHz
(picofarads)
CISS
(volts)
-40V
83pF
COSS CRSS
30pF
(volts)
(nanocoulombs)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
RDS(ON) (normalized)
VGS(th) (normalized)
-55°C
1.05
(amperes)
VP0550
3-Lead TO-92 Package Outline (N3)
Seating Plane
Front View
Side View
Bottom View
Symbol Dimensions (inches)
.170 .210
.014 .022
.014 .022
.175 .205
.125 .165
.080 .105
.095 .105
.045 .055
.500 .610*
JEDEC Registration TO-92. This dimension specified JEDEC drawing. This dimension differs from JEDEC drawing. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) this data sheet reflect most current specifications. latest package outline information
Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com.
©2009 rights reserved. Unauthorized reproduction prohibited.
Doc.# DSFP-VP0550 A052109
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com

Free from secondary breakdown power drive requirement Ease paralleling

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