Free from secondary breakdown power drive requirement Ease paralleling

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Free from secondary breakdown power drive requirement Ease paralleling

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VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs
Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain
This enhancement-mode (normally-off) transistor utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors with high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Device VN2460 Package Options TO-92 VN2460N3-G TO-243AA (SOT-89) VN2460N8-G BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min) (mA)
indicates package RoHS compliant (`Green')
Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* Value BVDSS BVDGS ±20V -55°C +150°C +300°C
SOURCE
GATE
GATE
SOURCE DRAIN
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Product Marking
SiVN YYWW
Year Sealed Week Sealed "Green" Packaging
Package include following marks:
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds.
TO-92 (N3)
VN4FW
Code week sealed "Green" Packaging
Package include following marks:
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2460
Thermal Characteristics
Package TO-92 TO-243AA
(continuous)* (mA)
(pulsed) (mA)
Power Dissipation
25OC
C/W)
C/W)
(mA)
(mA)
IDRM
0.74
Notes: (continuous) limited rated Mounted board, 25mm 25mm 1.57mm.
Electrical Characteristics 25°C unless otherwise specified)
BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF)
Parameter Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage current Zero gate voltage drain current
-5.5
Units mV/OC
Conditions 2.0mA VDS, 2.0mA VDS, 2.0mA ±20V, Rating
Rating, 125OC 10V, 4.5V, 100mA 10V, 100mA 10V, 100mA 25V, 100mA 25V, 1.0MHz 25V, 250mA, RGEN 400mA
On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage drop
0.25
mmho
Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested.
Switching Waveforms Test Circuit
PULSE GENERATOR OUTPUT
t(ON)
INPUT
t(OFF) td(OFF)
td(ON)
RGEN
D.U.T.
INPUT
OUTPUT
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2460
Typical Performance Curves
Output Characteristics
Saturation Characteristics
(Amperes)
(Amperes)
(Volts)
Transconductance Drain Current
(Volts)
Power Dissipation Temperature
SOT-89
(siemens)
(Watts)
-55OC
25OC
TO-92
125OC
(Amperes)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
SOT-89 (pulsed)
Thermal Resistance (normalized)
TO-92 (pulsed)
SOT-89 1.6W
(amperes)
TO-92 (DC)
SOT-89 (DC)
0.01
0.001
1000
TO-92
0.01
(Volts)
0.001
(seconds)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2460
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
Resistance Drain Current
4.5V
BVDSS (Normalized)
RDS(ON) (ohms)
(°C)
Transfer Characteristics
(Amperes)
VGS(TH) RDS(ON) Temperature
-55°C
VGS(th) (normalized)
25°C
125°C
VGS(th)
RDS(on) 10V, 0.1A
(Volts)
(°C)
Capacitance Drain Source Voltage
Gate Drive Dynamic Characteristics
1MHz
0.5A
VDS=10V
(picofarads)
(volts)
VDS=40V
CISS
COSS
CRSS
(volts)
(nanocoulombs)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
RDS(ON) (normalized)
(Amperes)
VN2460
3-Lead TO-92 Package Outline (N3)
Seating Plane
Front View
Side View
Bottom View
Symbol Dimensions (inches)
.170 .210
.014 .022
.014 .022
.175 .205
.125 .165
.080 .105
.095 .105
.045 .055
.500 .610*
JEDEC Registration TO-92. This dimension specified original JEDEC drawing. value listed reference only. This dimension non-JEDEC dimension. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2460
3-Lead TO-243AA (SOT-89) Package Outline (N8)
Symbol Dimensions (mm)
1.40 1.60
0.44 0.56
0.36 0.48
0.35 0.44
4.40 4.60
1.62 1.83
2.29 2.60
2.13 2.29
1.50
3.00
3.94 4.25
0.89 1.20
JEDEC Registration TO-243, Variation Issue July 1986. Drawings scale. Supertex Doc. DSPD-3TO243AAN8, Version D070908.
(The package drawing(s) this data sheet reflect most current specifications. latest package outline information
Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com.
©2008 rights reserved. Unauthorized reproduction prohibited.
Doc.# DSFP-VN2460 A011409
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com

Free from secondary breakdown power drive requirement Ease paralleling

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