Free from secondary breakdown power drive requirement Ease paralleling

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Free from secondary breakdown power drive requirement Ease paralleling

Datasheet Thumbnail

Top Searches for this datasheet

VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs
Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain
Supertex VN2224 enhancement-mode (normallyoff) transistor that utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors, high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally-induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Device VN2224
indicates package RoHS compliant (`Green')
Package Option TO-92 VN2224N3-G
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
1.25
Configuration
DRAIN
Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* Value BVDSS BVDGS ±20V -55°C +150°C +300°C
SOURCE GATE
TO-92 (N3)
Product Marking
SiVN YYWW Year Sealed Week Sealed "Green" Packaging TO-92 (N3)
Package include following marks:
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds.
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2224
Thermal Characteristics
Package TO-92
(continuous)
(pulsed)
Power Dissipation
25OC
C/W)
C/W)
IDRM
0.54
0.54
Notes: (continuous) limited rated
Electrical Characteristics 25°C unless otherwise specified)
BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF)
Parameter Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage current Zero gate voltage drain current
1000
-4.0 2200
-5.0 1.25
Units
Conditions 5.0mA VDS, 5.0mA VDS, 5.0mA ±20V, Rating Rating, 125OC 5.0V, 10V, 5.0V, 2.0A 10V, 2.0A 10V, 2.0A 25V, 2.0A 25V, 1.0MHz 25V, 2.0A, RGEN 1.0A 100mA
%/OC mmho
On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transconductance Input capacitance Common Source output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time Rise time Fall time Reverse recovery time Diode forward voltage drop
Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested.
Switching Waveforms Test Circuit
PULSE GENERATOR OUTPUT
t(ON)
INPUT
t(OFF) td(OFF)
td(ON)
RGEN
INPUT
D.U.T.
OUTPUT
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2224
Typical Performance Curves
Output Characteristics
Saturation Characteristics
(amperes)
(amperes)
(volts)
(volts)
Transconductance Drain Current
Power Dissipation Case Temperature
(siemens)
(watts)
25°C
125°C
-55°C
TO-92
(amperes)
(°C)
Maximum Rated Safe Operating Area
Thermal Resistance (normalized)
Thermal Response Characteristics
(amperes)
TO-92 (DC)
0.01
TO-92 25°C
0.01
0.001
25°C
1000
0.001
(volts)
(seconds)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN2224
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance Drain Current
BVDSS (normalized)
RDS(ON) (ohms)
Transfer Characteristics
(amperes) V(th) Variation with Temperature
(amperes)
25OC
125OC
VGS(th) (normalized)
(volts)
Capacitance Drain-to-Source Voltage
1MHz
Gate Drive Dynamic Characteristics
CISS
(picofarads)
(volts)
COSS
CRSS
(volts)
(nanocoulombs)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
RDS(ON) (normalized)
-55OC
10V,
VN2224
3-Lead TO-92 Package Outline (N3)
Seating Plane
Front View
Side View
Bottom View
Symbol Dimensions (inches)
.170 .210
.014 .022
.014 .022
.175 .205
.125 .165
.080 .105
.095 .105
.045 .055
.500 .610*
JEDEC Registration TO-92. This dimension specified original JEDEC drawing. value listed reference only. This dimension non-JEDEC dimension. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.
(The package drawing(s) this data sheet reflect most current specifications. latest package outline information
Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com.
©2008 rights reserved. Unauthorized reproduction prohibited.
Doc.# DSFP-VN2224 A122308
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com

Free from secondary breakdown power drive requirement Ease paralleling

Top Searches for this datasheet

Other recent searches