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Free from secondary breakdown power drive requirement Ease paralleling
Top Searches for this datasheetVN10K N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain This enhancement-mode (normally-off) transistor utilizes vertical DMOS structure Supertex's well-proven, silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally-induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device VN10K Package Option TO-92 VN10KN3-G BVDSS/BVDGS RDS(ON) (max) ID(ON) (min) (mA) indicates package RoHS compliant (`Green') Configuration DRAIN Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* SOURCE Value BVDSS BVDGS ±30V +150 TO-92 (N3) GATE Product Marking SiVN YYWW Year Sealed Week Sealed "Green" Packaging TO-92 (N3) 300OC Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds. Package include following marks: 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN10K Thermal Characteristics Package TO-92 (continuous) (mA) (pulsed) Power Dissipation 25OC C/W) C/W) (mA) IDRM Notes: (continuous) limited rated (VN0106N3 used (continuous) 500mA needed.) Electrical Characteristics BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS t(ON) t(OFF) Parameter 25OC unless otherwise specified) -3.8 Units Conditions 100µA VDS, 1.0mA 15V, 45V, 125°C 10V, 5.0V, 200mA 10V, 500mA 10V, 500mA 25V, 1.0MHz 15V, 600mA, RGEN 500mA 500mA Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage Zero gate voltage drain current On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward voltage drop Reverse recovery time VDS, 1.0mA %/OC 0.75 mmho 10V, 500mA Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested. Switching Waveforms Test Circuit t(ON) INPUT PULSE GENERATOR t(OFF) td(OFF) INPUT OUTPUT td(ON) RGEN D.U.T. OUTPUT 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN10K Typical Performance Curves Output Characteristics Saturation Characteristics =10V =10V (amperes) (amperes) (volts) (volts) Transconductance Drain Current Power Dissipation Case Temperature (watts) 25°C Output Voltage (volts) (amperes) Input Voltage (volts) TO-92 300µs, Duty Cycle Pulse Test 1000 (mA) (°C) Switching Waveform Maximum Rated Safe Operating Area TO-92 (DC) 0.01 1000 (volts) Time (ns) 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN10K Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance Gate-to-Source Voltage 0.1V BVDSS (normalized) RDS(ON) (ohms) (°C) Transfer Characteristics (Volts) Output Conductance Drain Current 300µs, DUTY CYCLE PULSE TEST 80µs, DUTY CYCLE PULSE TEST REDUCTION HEATING (amperes) (mhos) 0.01 0.01 (volts) Capacitance Drain-to-Source Voltage (amperes) Transconductance Gate-Source Voltage CISS 3000µs, DUTY CYCLE PULSE TEST (picofarads) COSS CRSS (volts) (volts) 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN10K 3-Lead TO-92 Package Outline (N3) Seating Plane Front View Side View Bottom View Symbol Dimensions (inches) .170 .210 .014 .022 .014 .022 .175 .205 .125 .165 .080 .105 .095 .105 .045 .055 .500 .610* JEDEC Registration TO-92. This dimension specified original JEDEC drawing. value listed reference only. This dimension non-JEDEC dimension. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408. (The package drawing(s) this data sheet reflect most current specifications. latest package outline information Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com. ©2009 rights reserved. Unauthorized reproduction prohibited. Doc.# DSFP-VN10K A022109 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com Other recent searchesSN74ABT16241A - SN74ABT16241A SN74ABT16241A Datasheet SN54ABT16241A - SN54ABT16241A SN54ABT16241A Datasheet KBPC610 - KBPC610 KBPC610 Datasheet 66CX1440PE - 66CX1440PE 66CX1440PE Datasheet 1850741 - 1850741 1850741 Datasheet
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