Free from secondary breakdown power drive requirement Ease paralleling

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Free from secondary breakdown power drive requirement Ease paralleling

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VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs
Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain
Supertex VN0550 enhancement-mode (normallyoff) transistor that utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors, high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally-induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information
Device VN0550 Package Option TO-92 VN0550N3-G BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min) (mA)
indicates package RoHS compliant (`Green')
Configuration
DRAIN
Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* Value BVDSS BVDGS ±20V -55°C +150°C +300°C
SOURCE GATE
TO-92 (N3)
Product Marking
SiVN YYWW Year Sealed Week Sealed "Green" Packaging TO-92 (N3)
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds.
Package include following marks:
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN0550
Thermal Characteristics
Package TO-92
(continuous) (mA)
(pulsed) (mA)
Power Dissipation
25OC
C/W)
C/W)
(mA)
(mA)
IDRM
Notes: (continuous) limited rated
Electrical Characteristics 25°C unless otherwise specified)
BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF)
Parameter Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage current Zero gate voltage drain current
-3.8
-5.0
Units
Conditions 1.0mA VDS, 1.0mA VDS, 1.0mA ±20V, Rating Rating, 125OC 5.0V, 10V, 5.0V, 50mA 10V, 50mA 10V, 50mA 25V, 50mA 25V, 1.0MHz 25V, 150mA, RGEN 500mA 500mA
%/OC mmho
On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on time Rise time Turn-off time Fall time Diode forward voltage drop Reverse recovery time
Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested.
Switching Waveforms Test Circuit
PULSE GENERATOR OUTPUT
t(ON)
INPUT
t(OFF) td(OFF)
td(ON)
RGEN
INPUT
D.U.T.
OUTPUT
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN0550
Typical Performance Curves
Output Characteristics
0.25
Saturation Characteristics
0.20
(amperes)
(amperes)
0.15
0.10
0.05
(volts)
(volts)
0.40
Transconductance Drain Current
Power Dissipation Case Temperature
0.32
(siemens)
0.16
25°C
(watts)
0.24
-55°C
0.08
125°C
TO-92
(amperes)
Maximum Rated Safe Operating Area
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
(amperes)
TO-92 (DC)
0.01
TO-92 25°C
0.001
25°C
1000
0.001 0.01
(volts)
(seconds)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
VN0550
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance Drain Current
BVDSS (normalized)
RDS(ON) (ohms)
(°C) Transfer Characteristics
(amperes) V(th) Variation with Temperature
RDS(ON) 10V, 50mA
V(th)
150°C
(volts)
Tj(°C)
Capacitance Drain-to-Source Voltage
1MHz
Gate Drive Dynamic Characteristics
(picofarads)
CISS
(volts)
COSS
CRSS
(volts)
(nanocoulombs)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
RDS(ON) (normalized)
VGS(th) (normalized)
25°C
(amperes)
VN0550
3-Lead TO-92 Package Outline (N3)
Seating Plane
Front View
Side View
Bottom View
Symbol Dimensions (inches)
.170 .210
.014 .022
.014 .022
.175 .205
.125 .165
.080 .105
.095 .105
.045 .055
.500 .610*
JEDEC Registration TO-92. This dimension specified original JEDEC drawing. value listed reference only. This dimension non-JEDEC dimension. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.
(The package drawing(s) this data sheet reflect most current specifications. latest package outline information
Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com.
©2009 rights reserved. Unauthorized reproduction prohibited.
Doc.# DSFP-VN0550 A020209
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com

Free from secondary breakdown power drive requirement Ease paralleling

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