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Free from secondary breakdown power drive requirement Ease paralleling
Top Searches for this datasheetVN0109 N-Channel Enhancement-Mode Vertical DMOS Free from secondary breakdown power drive requirement Ease paralleling CISS fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance high gain This enhancement-mode (normally-off) transistor utilizes vertical DMOS structure Supertex's well-proven, silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally-induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired. Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device VN0109 Package Option TO-92 VN0109N3-G BVDSS/BVDGS RDS(ON) (max) ID(ON) (min) indicates package RoHS compliant (`Green') Configuration DRAIN SOURCE Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* Value BVDSS BVDGS ±20V +150OC 300OC TO-92 (N3) GATE Product Marking SiVN YYWW Year Sealed Week Sealed "Green" Packaging TO-92 (N3) Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds. Package include following marks: 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN0109 Thermal Characteristics Package TO-92 (continuous) (mA) (pulsed) Power Dissipation 25OC C/W) C/W) (mA) IDRM Notes: (continuous) limited rated Electrical Characteristics BVDSS VGS(th) VGS(th) IGSS IDSS ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF) Parameter 25OC unless otherwise specified) -3.8 0.70 -5.5 Units Conditions 1.0mA VDS, 1.0mA 20V, Rating Rating, 125°C 5.0V, 10V, 5.0V, 250mA 10V, 1.0A 10V, 1.0A 25V, 1.0MHz 25V, 1.0A, RGEN 1.0A 1.0A Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage Zero gate voltage drain current VDS, 1.0mA On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage drop Reverse recovery time mmho 25V, 500mA Notes: D.C. parameters 100% tested 25OC unless otherwise stated. (Pulse test: 300µs pulse, duty cycle.) A.C. parameters sample tested. Switching Waveforms Test Circuit PULSE GENERATOR OUTPUT t(ON) INPUT t(OFF) td(OFF) td(ON) RGEN D.U.T. INPUT OUTPUT 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN0109 Typical Performance Curves 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com VN0109 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance Drain Current BVDSS (normalized) RDS(ON) (ohms) (°C) Transfer Characteristics (amperes) V(th) Variation with Temperature -55°C 25°C VGS(th) (normalized) 125°C V(th) 0.25A (volts) (°C) Capacitance Drain-to-Source Voltage 1MHz Gate Drive Dynamic Characteristics (picofarads) CISS (volts) COSS CRSS (volts) (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com RDS(ON) (normalized) 10V, 1.0A (amperes) VN0109 3-Lead TO-92 Package Outline (N3) Seating Plane Front View Side View Bottom View Symbol Dimensions (inches) .170 .210 .014 .022 .014 .022 .175 .205 .125 .165 .080 .105 .095 .105 .045 .055 .500 .610* JEDEC Registration TO-92. This dimension specified JEDEC drawing. This dimension differs from JEDEC drawing. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) this data sheet reflect most current specifications. latest package outline information Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com. ©2009 rights reserved. Unauthorized reproduction prohibited. Doc.# DSFP-VN0109 A041409 1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com Other recent searchesNJU7082B - NJU7082B NJU7082B Datasheet HA144E - HA144E HA144E Datasheet EMP105-P2 - EMP105-P2 EMP105-P2 Datasheet AT45D021 - AT45D021 AT45D021 Datasheet AN1097 - AN1097 AN1097 Datasheet
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