threshold (-2.0V max.) High input impedance input capacitance Fast swi

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threshold (-2.0V max.) High input impedance input capacitance Fast swi

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TP2635 P-Channel Enhancement-Mode Vertical DMOS
threshold (-2.0V max.) High input impedance input capacitance Fast switching speeds on-resistance Free from secondary breakdown input output leakage
This threshold enhancement-mode (normally-off) transistor utilizes vertical DMOS structure Supertex's well-proven silicon-gate manufacturing process. This combination produces device with power handling capabilities bipolar transistors with high input impedance positive temperature coefficient inherent devices. Characteristic structures, this device free from thermal runaway thermally induced secondary breakdown. Supertex's vertical DMOS FETs ideally suited wide range switching amplifying applications where very threshold voltage, high breakdown voltage, high input impedance, input capacitance, fast switching speeds desired.
Applications
Logic level interfaces ideal CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Ordering Information
Device TP2635 Package Option TO-92 TP2635N3-G BVDSS/BVDGS
(max)
RDS(ON)
(max)
VGS(th)
(max)
ID(ON)
(min)
-350
-2.0
-0.7
indicates package RoHS compliant (`Green')
Configuration
Absolute Maximum Ratings
Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating storage temperature Soldering temperature* Value BVDSS BVDGS ±20V -55°C +150°C +300°C
DRAIN SOURCE GATE
TO-92 (N3)
Product Marking
SiTP YYWW Year Sealed Week Sealed "Green" Packaging TO-92 (N3)
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied. Continuous operation device absolute rating level affect device reliability. voltages referenced device ground. Distance 1.6mm from case seconds.
Package include following marks:
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
TP2635
Thermal Characteristics
Package TO-92
(continuous) (mA)
(pulsed)
Power Dissipation
25OC
C/W)
C/W)
(mA)
IDRM
-180
-0.8
-180
-0.8
Notes: (continuous) limited rated
Electrical Characteristics 25°C unless otherwise specified)
BVDSS VGS(th) VGS(th) IGSS
Parameter Drain-to-source breakdown voltage Gate threshold voltage Change VGS(th) with temperature Gate body leakage
-350 -0.8
-2.0 -100 -1.0 -10.0 -1.0
Units
Conditions -2.0mA VDS, -1.0mA VDS, -1.0mA ±20V, -100V rating Rating, 125OC -10V, -25V -2.5V, -20mA -4.5V, -150mA -10V, -300mA -10V, -300mA -25V, -300mA -25V, 1.0MHz -25V, -300mA, RGEN -200mA -200mA
IDSS
Zero gate voltage drain current
ID(ON) RDS(ON) RDS(ON) CISS COSS CRSS td(ON) td(OFF)
On-state drain current Static drain-to-source on-state resistance Change RDS(ON) with temperature Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Diode forward voltage drop Reverse recovery time
-0.7
0.75 -1.8
mmho
Notes: D.C. parameters 100% tested unless otherwise stated. (Pulse test: 300s pulse, duty cycle.) A.C. parameters sample tested.
Channel Switching Waveforms Test Circuit
t(OFF)
INPUT
-10V
PULSE GENERATOR
RGEN
INPUT
t(ON)
td(ON)
td(OFF)
D.U.T. Output
OUTPUT
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
TP2635
Typical Performance Curves
Output Characteristics
-2.0
Saturation Characteristics
-1.0
-10V
-0.8
-1.6
-10V
(amperes)
-0.8
(amperes)
-1.2
-0.6
-0.4
-0.2
-0.4
(volts)
(volts) Power Dissipation Temperature
Transconductance Drain Current
(siemens)
-25V
(watts)
TO-92
-55°C
125°C
-0.4 -0.8
-1.2
25°C
-1.6
-2.0
(amperes) Maximum Rated Safe Operating Area
Thermal Response Characteristics
Thermal Resistance (normalized)
-1.0
TO-92 (pulsed)
(amperes)
-0.1
TO-92 (DC)
-0.01
25°C
-0.001
TO-92 25°C 1.0W
-100
-1000
0.001
0.01
(volts)
(seconds)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
TP2635
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance Drain Current
-2.5V
BVDSS (normalized)
-4.5V
RDS(ON) (ohms)
-10V
-0.4 -0.8 -1.2 -1.6 -2.0
Transfer Characteristics
-2.0
(amperes) Variation with Temperature
-25V
-1.6
V(th) -1mA
VGS(th) (normalized)
(amperes)
-1.2
-55°C
25°C
-0.8
RDS(ON)@ -10V, -0.3A
-0.4
(volts) Capacitance Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
1MHz
(picofarads)
678pF
(volts)
CISS
-10V
-40V
COSS
CRSS
263pF
(volts)
(nanocoulombs)
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com
RDS(ON) (normalized)
+125°C
TP2635
3-Lead TO-92 Package Outline (N3)
Seating Plane
Front View
Side View
Bottom View
Symbol Dimensions (inches)
.170 .210
.014 .022
.014 .022
.175 .205
.125 .165
.080 .105
.095 .105
.045 .055
.500 .610*
JEDEC Registration TO-92. This dimension specified JEDEC drawing. This dimension differs from JEDEC drawing. Drawings scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) this data sheet reflect most current specifications. latest package outline information
Supertex inc. does recommend products life support applications, will knowingly sell them such applications unless receives adequate "product liability indemnification insurance agreement." Supertex inc. does assume responsibility devices described, limits liability replacement devices determined defective workmanship. responsibility assumed possible omissions inaccuracies. Circuitry specifications subject change without notice. latest product specifications refer Supertex inc. website: http//www.supertex.com.
©2009 rights reserved. Unauthorized reproduction prohibited.
Doc.# DSFP-TP2635 A062209
1235 Bordeaux Drive, Sunnyvale, 94089 Tel: 408-222-8888 www.supertex.com

threshold (-2.0V max.) High input impedance input capacitance Fast swi

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