N-channel 0.018 DPAK STripFETII Power MOSFET Type STD45NF75 VDSS
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STD45NF75
N-channel 0.018 DPAK STripFETII Power MOSFET
Type STD45NF75 VDSS RDS(on) 0.024 A(1)
Current limited package
100% avalanche tested Gate charge minimized
DPAK
Application
Switching applications
Description
This Power MOSFET latest development STMicroelectronics's unique "single feature size" strip-based process. resulting transistor shows extremely high packing density onresistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. Figure Internal schematic diagram
Table
Device summary
Marking D45NF75 Package DPAK Packaging Tape reel
Order code STD45NF75T4
2009
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www.st.com
Contents
STD45NF75
Contents
Electrical ratings Electrical characteristics
Electrical characteristics (curves)
Spice thermal model Test circuits
Package mechanical data Packing mechanical data Revision history
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Electrical ratings
Electrical ratings
Table
Symbol VDGR ID(1) IDM(2) Ptot
Absolute maximum ratings
Parameter Drain-source voltage (VGS Drain-gate voltage (RGS Gate- source voltage Drain current (continuous) Drain current (continuous) Drain current (pulsed) Total dissipation Derating factor Value 0.83 Max. operating junction temperature Unit W/°C V/ns
dv/dt
Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature
Tstg
Current limited package Pulse width limited safe operating area. di/dt A/µs, V(BR)DSS, TJMAX Starting
Table
Symbol Rthj-case Rthj-pcb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-pcb Maximum lead temperature soldering purpose(1) Value Figure Figure Unit °C/W °C/W
sec. from case
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Electrical characteristics
STD45NF75
Electrical characteristics
(TCASE=25 unless otherwise specified) Table
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS Gate-body leakage current (VDS Gate threshold voltage Static drain-source resistance Test conditions rating rating, VGS, 0.018 Min. ±100 0.024 Typ. Max. Unit
IDSS
IGSS VGS(th) RDS(on)
Table
Symbol Ciss Coss Crss td(on) td(off)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 1760 Max. Unit
MHz,
(see Figure (see Figure
Pulsed: Pulse duration duty cycle 1.5%.
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Electrical characteristics
Table
Symbol ISDM IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward voltage Test conditions Min. Typ. Max. Unit
Reverse recovery time di/dt A/µs, Reverse recovery charge Reverse recovery current (see Figure
Pulse width limited safe operating area. Pulsed: Pulse duration duty cycle 1.5%
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Electrical characteristics
STD45NF75
Figure
Electrical characteristics (curves)
Safe operating area
AM03943v1
Figure
Thermal impedance
280dpg
=0.5
(on)
100µs
0.05 0.02 0.01 Single pulse
Tj=150°C Tc=25°C Sinlge pulse
10ms
Zth=k Rthj-c =tp/
VDS(V)
Figure
Output characteristics
Figure
Transfer characteristics
Figure
Transconductance
Figure
Static drain-source resistance
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STD45NF75 Figure Gate charge gate-source voltage Figure
Electrical characteristics Capacitance variations
Figure Normalized gate threshold voltage temperature
Figure Normalized resistance temperature
Figure Source-drain diode forward characteristics
Figure Normalized breakdown voltage temperature
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Electrical characteristics Figure Power derating Figure current
STD45NF75
Figure Thermal resistance Rthj-a copper area
Figure power dissipation copper area
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Electrical characteristics
Figure Allowable time avalanche
previous curve gives safe operating area unclamped inductive loads, single pulse repetitive, under following conditions:
PD(AVE) (1.3 BVDSS IAV) EAS(AR) PD(AVE) Where: allowable current avalanche PD(AVE) average power dissipation avalanche (single pulse) time avalanche rate above fixed IAV, following equation must applied: (Tjmax TCASE)/ (1.3 BVDSS Zth) Where: value coming from normalized thermal response fixed pulse width equal TAV.
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Spice thermal model
STD45NF75
Spice thermal model
Table Spice parameter
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 Node Value 10-4 10-3 10-2 10-2 9.65 10-2 10-1
RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6
0.045 0.105 0.150 0.225 0.375 0.600
Figure Thermal network
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Test circuits
Test circuits
Figure Gate charge test circuit
2200
Figure Switching times test circuit resistive load
100nF
D.U.T.
Vi=20V=VGMAX
2200
IG=CONST 2.7k
AM01469v1
D.U.T.
AM01468v1
Figure Test circuit inductive load Figure Unclamped inductive load test switching diode recovery times circuit
D.U.T.
FAST DIODE
L=100µH 1000
2200
D.U.T.
AM01470v1 AM01471v1
Figure Unclamped inductive waveform
V(BR)DSS
Figure Switching time waveform
tdon toff tdoff
AM01472v1
AM01473v1
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Package mechanical data
STD45NF75
Package mechanical data
order meet environmental requirements, offers these devices different grades ECOPACK® packages, depending their level environmental compliance. ECOPACK® specifications, grade definitions product status available www.st.com. ECOPACK trademark.
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Package mechanical data
TO-252 (DPAK) mechanical data
DIM. 0.60 0.20 4.40 9.35 2.80 0.80 6.40 2.28 4.60 10.10 min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Packing mechanical data
STD45NF75
Packing mechanical data
DPAK FOOTPRINT
dimensions millimeters
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 16.4 22.4 18.4 13.2 MIN. MAX. 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
BASE 2500
MIN. 10.4 1.65 2.55
15.7 16.3
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.85 2.75
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Revision history
Revision history
Table
Date 22-Jun-2004 09-Sep-2004 11-Jul-2006 20-Feb-2007 20-May-2009
Document revision history
Revision Preliminary version Complete version template, content change Typo mistake page Figure Figure have been updated Changes
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