N-CHANNEL 550V Tjmax- DPAK/IPAK Zener-Protected MDmeshMOSFET TYPE

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-CHANNEL 550V Tjmax- DPAK/IPAK Zener-Protected MDmeshMOSFET TYPE

Datasheet Thumbnail

Top Searches for this datasheet

STD3NM50 STD3NM50-1
N-CHANNEL 550V Tjmax- DPAK/IPAK Zener-Protected MDmeshMOSFET
TYPE STD3NM50 STD3NM50-1
VDSS (@Tjmax) 550V 550V
RDS(on)
TYPICAL RDS(on) HIGH dv/dt AVALANCHE CAPABILITIES IMPROVED CAPABILITY INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTORING YIELDS
DPAK TO-252
IPAK TO-251
DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar completition's products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS MDmeshfamily very suitable increase power density high voltage converters allowing system miniaturization higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Gate source (HBM-C=100pF, R=15K) Derating Factor
Parameter
Value 1.89 0.37
Unit W/°C V/ns
PTOT
VESD(G-S) dv/dt(1) Tstg
Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
width limited safe operating area (1)ISD< di/dt< 400A/µs, VDD< V(BR)DSS, TJ<TJMAX
February 2004
1/10
STD3NM50/STD3NM50-1
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 2.73 62.5 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Rating Zero Gate Voltage Drain Current (VGS Rating, Gate-body Leakage Current (VDS
Symbol VGS(th) RDS(on) Parameter Static Drain-source Resistance Test Conditions 10V, 1.5A Gate Threshold Voltage VGS, 250µA
DYNAMIC
Symbol Ciss Coss Crss Parameter
Forward Transconductance ID(on) RDS(on)max, Input Capacitance
Output Capacitance Reverse Transfer Capacitance
Min. Min.
Typ.
Max.
Unit
Test Conditions
Typ.
Max.
Unit
25V, MHz,
Gate Input Resistance
Gate Bias Test Signal Level 20mV Open Drain
Note: Pulsed: Pulse duration duty cycle
2/10
STD3NM50/STD3NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, 1.5A (see test circuit, Figure 400V, Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 480V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 25°C (see test circuit, Figure di/dt 100A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ.
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
GATE-SOURCE ZENER DIODE
Symbol BVGSO
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate source. this respect Zener voltage appropriate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
Gate-Source Breakdown Voltage
Parameter
Max.
Unit
Test Conditions Igs=± (Open Drain)
Min.
Typ.
Max.
Unit
3/10
STD3NM50/STD3NM50-1
Safe Operating Area DPAK IPAK Thermal Impedance DPAK IPAK
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
4/10
STD3NM50/STD3NM50-1
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
Normalized BVdss Temperature
5/10
STD3NM50/STD3NM50-1
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
6/10
STD3NM50/STD3NM50-1
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.60 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 1.00 TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024
DIM.
0.024
0.031
0.244
0.260 0.181
0.398
0.039
P032P_B
7/10
STD3NM50/STD3NM50-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0.354 0.031
0.023
0.244
0.260 0.181
0.641 0.370 0.047 0.039
0.031
0068771-E
8/10
STD3NM50/STD3NM50-1
DPAK FOOTPRINT
TUBE SHIPMENT suffix)*
dimensions millimeters
dimensions millimeters
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. MIN. inch
TAPE MECHANICAL DATA
DIM. MIN. 10.4
1.65 2.55
15.7
10.6 1.85 2.75
16.3
MAX.
MIN.
0.267 0.275 0.476
inch
12.8 20.2 16.4 2500
MAX.
MAX. 12.992
MIN.
0.059 13.2 18.4 22.4 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK 2500
BASE
MAX.
0.409 0.417 0.059 0.063
12.1
0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641
sales type
9/10
STD3NM50/STD3NM50-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2004 STMicroelectronics Rights Reserved STMicroelectronics GROUP COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
10/10

N-CHANNEL 550V Tjmax- DPAK/IPAK Zener-Protected MDmeshMOSFET TYPE

Top Searches for this datasheet

Other recent searches