HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL 600V dV/dt IMMUNI

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL 600V dV/dt IMMUNI

Datasheet Thumbnail

Top Searches for this datasheet

L6386
HIGH-VOLTAGE HIGH SIDE DRIVER
HIGH VOLTAGE RAIL 600V dV/dt IMMUNITY V/nsec FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: SOURCE, SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS PULL DOWN UNDER VOLTAGE LOCK LOWER UPPER DRIVING SECTION INTEGRATED BOOTSTRAP DIODE OUTPUTS PHASE WITH INPUTS DESCRIPTION L6386 high-voltage device, manufactured with "OFF-LINE" technology. Driver structure that enables drive indeBLOCK DIAGRAM
SO14
DIP14
ORDERING NUMBERS: L6386D
L6386
pendent referenced Channel Power IGBT. Upper (Floating) Section enabled work with voltage Rail 600V. Logic Inputs CMOS/TTL compatible ease interfacing with controlling devices.
BOOTSTRAP DRIVER
DETECTION
VREF SGND
July 1999
Vboot H.V. DRIVER LOAD CBOOT
DETECTION
LEVEL SHIFTER LOGIC
DRIVER
PGND DIAG
D97IN520D
1/10
L6386
ABSOLUTE MAXIMUM RATINGS
Symbol Vout Vboot Vhvg Vlvg Vdiag Vcin dVout/dt Ptot Output Voltage Supply Voltage Floating Supply Voltage Upper Gate Output Voltage Lower Gate Output Voltage Logic Input Voltage Open Drain Forced Voltage Comparator Input Voltage Allowed Output Slew Rate Total Power Dissipation Junction Temperature Storage Temperature Parameter Value Vboot Vboot -0.3 +0.3 -0.3 +0.3 -0.3 +0.3 -0.3 +0.3 Unit V/ns
Note: immunity pins guaranteed 900V (Human Body Model)
CONNECTION
DIAG SGND Vboot N.C. N.C.
THERMAL DATA
Symbol j-amb
Thermal Resistance Junction Ambient
DESCRIPTION
Name DIAG SGND PGND N.C. Vboot
Type
Parameter
D97IN521A
PGND
SO14
DIP14
Unit °C/W
Function
Lower Driver Logic Input Shut Down Logic Input Upper Driver Logic Input Voltage Supply Open Drain Diagnostic Output Comparator Input Ground Power Ground Side Driver Output Connected Upper Driver Floating Driver High Side Driver Output Bootstrapped Supply Voltage
circuit guarantees 0.3V maximum Isink 10mA), with >3V. This allows omit "bleeder" resistor connected between gate source external MOSFET normally used hold low; gate driver assures impedance also condition.
2/10
L6386
RECOMMENDED OPERATING CONDITIONS
Symbol Vout VbootVout Parameter Output Voltage Floating Supply Voltage Switching Frequency Supply Voltage Junction Temperature HVG,LVG load Test Condition Min. Note1 Note1 Typ. Max. Unit
Note condition Vboot Vout guaranteed, Vout range from 580V.
ELECTRICAL CHARACTERISTICS Operation (Vcc 15V; 25°C)
Symbol toff 9,13 13,9 13,9 Parameter High/Low Side Driver Turn-On Propagation Delay High/Low Side Driver Turn-Off Propagation Delay Shut Down High/Low Side Propagation Delay Rise Time Fall Time Test Condition Vout Vout Vout 1000pF 1000pF Min. Typ. Max. Unit
Operation (Vcc 15V; 25°C)
Symbol Parameter Supply Voltage Section Supply Voltage Vccth1 Turn Threshold Vccth2 Turn Threshold Vcchys Hysteresis Iqccu Undervoltage Quiescent Supply Current Iqcc Quiescent Current Bootstrapped Supply Section Vboot Bootstrapped Supply Voltage Vbth1 Vboot Turn Threshold Vbth2 Vboot Turn Threshold Vbhys Vboot Hysteresis Iqboot Vboot Quiescent Current Leakage Current Rdson Bootstrap Driver Resistance Driving Buffers Section High/Low Side Driver Short Circuit Source Current High/Low Side Driver Short Circuit Sink Current Logic Inputs 1,2,3 Level Logic Threshold Voltage High Level Logic Threshold Voltage High Level Logic Input Current Level Logic Input Current Test Condition
Min.
Unit
Typ.
Max. 12.5 10.5
11.5
12.9 10.7
10.7 Vout Vboot Vout Vboot 600V 12.5V; 10µs)
11.9
RDSON tested following way: RDSON
(VCC VCBOOT1) (VCC VCBOOT2) I1(VCC,VCBOOT1) I2(VCC,VCBOOT2)
where current when VCBOOT VCBOOT1, when VCBOOT VCBOOT2.
3/10
L6386
OPERATION (continued)
Symbol Vref Parameter Input Offset Voltage Input Bias Current Open Drain Level Output Voltage, -2.5mA Comparator Reference voltage 0.460 Vcin Test Condition Min. 0.540 Typ. Max. Unit Sense Comparator
Figure Timing Waveforms
HOUT LOUT
VREF VCIN
DIAG
Note: active condition latched until next negative edge.
Figure Typical Rise Fall Times Load Capacitance
time (nsec)
D97IN522A
Figure Quiescent Current Supply Voltage
(µA)
D99IN1057
D99IN1054
(nF) both high side buffers @25°C Tamb
VS(V)
4/10
L6386
BOOTSTRAP DRIVER bootstrap circuitry needed supply high voltage section. This function normally accomplished high voltage fast recovery diode (fig. 4a). L6386 patented integrated structure replaces external diode. realized high voltage DMOS, driven synchronously with side driver (LVG), with series diode, shown fig. internal charge pump (fig. provides DMOS driving voltage diode connected series DMOS been added avoid undesirable turn CBOOT selection charging: choose proper CBOOT value external seen equivalent capacitor. This capacitor CEXT related total gate charge CEXT Qgate Vgate supply CEXT. This charge capacitor means voltage drop internal bootstrap driver gives great advantages: external fast recovery diode avoided usually great leakage current). This structure work only VOUT close lower) meanwhile charging time (Tcharge CBOOT time which both conditions fulfilled long enough charge capacitor. bootstrap driver introduces voltage drop DMOS RDSON (typical value: Ohm). frequency this drop neglected. Anyway increasing frequency must taken account. following equation useful compute drop bootstrap DMOS: Vdrop IchargeRdson Vdrop
ratio between capacitors CEXT CBOOT proportional cyclical voltage loss CBOOT>>>CEXT
e.g.: Qgate 30nC Vgate 10V, CEXT 3nF. With CBOOT 100nF drop would 300mV. supplied long time, CBOOT selection take into account also leakage losses. e.g.: steady state consumption lower than 200µA, 5ms, CBOOT Figure Bootstrap Driver.
where Qgate gate charge external power MOS, Rdson resistance bootstrap DMOS, Tcharge charging time bootstrap capacitor. example: using power with total gate charge 30nC drop bootstrap DMOS about Tcharge 5µs. fact:
Vdrop
Qgate
Tcharge
Rdson
30nC 0.8V
Vdrop taken into account when voltage drop CBOOT calculated: this drop high, circuit topology doesn't allow sufficient charging time, external diode used.
DBOOT
VBOOT H.V.
VBOOT H.V.
CBOOT VOUT LOAD
CBOOT VOUT LOAD
D99IN1056
5/10
L6386
Figure Turn Time Temperature
Figure VBOOT Turn Threshold Temperature
(ns)
Typ.
Vbth1
Typ.
(°C)
(°C)
Figure Turn Time Temperature
Figure VBOOT Turn Threshold Temperature
Toff (ns) (°C)
Typ.
Figure Shutdown Time Temperature
(ns0
Vbhys
Typ.
Vbth2
Typ.
(°C)
Figure VBOOT Hysteresis
Typ.
(°C)
(°C)
6/10
L6386
Figure Turn Threshold Temperature
Figure Output Source Current Temperature
1000
current (mA)
Typ. (°C)
Typ.
Vccth1(V)
(°C)
Figure Turn Threshold Temperature
Typ.
Figure Output Sink Current Temperature
1000 current (mA)
Typ.
Vccth2(V)
(°C)
Figure Hysteresis Temperature
Vcchys
Typ.
(°C)
(°C)
7/10
L6386
DIM. MIN. 1.27 0.51 1.39
TYP. MAX. MIN. 0.020 1.65 0.25 2.54 15.24 2.54 0.050 0.055
inch TYP. MAX.
OUTLINE MECHANICAL DATA
0.065 0.020 0.010 0.787 0.335 0.100 0.600 0.280 0.201 0.130 0.100
eDIP14
8/10
L6386
MIN. 8.55 1.27 7.62 1.27 0.68 (max.) 0.150 0.181 0.016 0.35 0.19 (typ.) 8.75 0.336 0.228 0.050 0.300 0.157 0.209 0.050 0.027 0.344 0.244 TYP. MAX. 1.75 0.25 0.46 0.25 0.014 0.007 0.020 0.004 MIN. inch TYP. MAX. 0.069 0.009 0.063 0.018 0.010
DIM.
OUTLINE MECHANICAL DATA
SO14
include mold flash protrusions. Mold flash potrusions shall exceed 0.15mm (.006inch).
9/10
L6386
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com
10/10

HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL 600V dV/dt IMMUNI

Top Searches for this datasheet

Other recent searches